61st Device Research Conference. Conference Digest (Cat. No.03TH8663)
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P-channel InGaN-HFET structure based on polarization doping

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226852 ◽

2004 ◽

Cited By ~ 1

Author(s):

T. Zimmermann ◽

M. Neuburger ◽

M. Kunze ◽

I. Daumiller ◽

A. Denisenko ◽

...

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Stretchable and deformable macroelectronics

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226929 ◽

2004 ◽

Author(s):

S. Wagner ◽

S.P. Lacour ◽

P.-H.I. Hsu ◽

J.C. Sturm ◽

Z. Suo

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Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226904 ◽

2004 ◽

Author(s):

Il Hwan Cho ◽

Tai-Su Park ◽

Si Young Choi ◽

Jong Duk Lee ◽

Jong-Ho Lee

Keyword(s):

Flash Memory ◽

Memory Device ◽

Double Gate ◽

Si Wafer

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Metamorphic 6.0 Å In/sub 0.86/Al/sub 0.14/As/In/sub 0.86/Ga/sub 0.14/As double heterojunction bipolar transistors

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226910 ◽

2004 ◽

Author(s):

C. Monier ◽

A. Cavus ◽

R. Sandhu ◽

D. Sawdai ◽

M. Lange ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction

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Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226919 ◽

2004 ◽

Cited By ~ 3

Author(s):

J. Appenzeller ◽

J. Knoch ◽

P. Avouris

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Thin Body ◽

Barrier Device

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A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226876 ◽

2004 ◽

Cited By ~ 2

Author(s):

S.S. Islam ◽

A.F.M. Anwar ◽

R.T. Webster

Keyword(s):

Electrical Characteristics ◽

Frequency Dependent

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Ka-band CW power performance by AlGaN/GaN HEMTs on SiC

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226851 ◽

2004 ◽

Cited By ~ 2

Author(s):

C. Lee ◽

Jinwei Yang ◽

M. Asif Khan ◽

P. Saunier

Keyword(s):

Power Performance ◽

Ka Band ◽

Gan Hemts

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Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226855 ◽

2004 ◽

Author(s):

Yanbin Luo ◽

Jianhui Zhang ◽

P. Alexandrov ◽

L. Fursin ◽

J.H. Zhao

Keyword(s):

High Power ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Fabrication And Characterization

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High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226884 ◽

2004 ◽

Cited By ~ 3

Author(s):

D. Shahrjerdi ◽

B. Hekmatshoar ◽

S.S. Mohajerzadeh ◽

A. Khakifirooz

Keyword(s):

High Mobility

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Compact model of MOSFET electron tunneling current through ultra-thin SiO/sub 2/ and high-k gate stacks

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226865 ◽

2004 ◽

Author(s):

Fei Li ◽

S.P. Mudanai ◽

Yang-Yu Fan ◽

L.F. Register ◽

S.K. Banerjee

Keyword(s):

Electron Tunneling ◽

Tunneling Current ◽

Compact Model ◽

Gate Stacks ◽

High K

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61st Device Research Conference. Conference Digest (Cat. No.03TH8663)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

P-channel InGaN-HFET structure based on polarization doping

Stretchable and deformable macroelectronics

Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer

Metamorphic 6.0 Å In/sub 0.86/Al/sub 0.14/As/In/sub 0.86/Ga/sub 0.14/As double heterojunction bipolar transistors

Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device

A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs

Ka-band CW power performance by AlGaN/GaN HEMTs on SiC

Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

Compact model of MOSFET electron tunneling current through ultra-thin SiO/sub 2/ and high-k gate stacks

61st Device Research Conference. Conference Digest (Cat. No.03TH8663)
Latest Publications