Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications

Nano Letters ◽  
2010 ◽  
Vol 10 (12) ◽  
pp. 5060-5064 ◽  
Author(s):  
J. L. Xia ◽  
F. Chen ◽  
P. Wiktor ◽  
D. K. Ferry ◽  
N. J. Tao
2008 ◽  
Vol 85 (5-6) ◽  
pp. 1035-1038 ◽  
Author(s):  
F.V. Farmakis ◽  
Th. Speliotis ◽  
K.P. Alexandrou ◽  
C. Tsamis ◽  
M. Kompitsas ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (68) ◽  
pp. 54861-54866 ◽  
Author(s):  
Myungwoo Son ◽  
Hangil Ki ◽  
Kihyeun Kim ◽  
Sunki Chung ◽  
Woong Lee ◽  
...  

A general model for the prediction of capacitance in graphene nanoribbon array FETs was developed with considering complex fringe fields.


2018 ◽  
Vol 100 ◽  
pp. 312-325 ◽  
Author(s):  
Rafiq Ahmad ◽  
Tahmineh Mahmoudi ◽  
Min-Sang Ahn ◽  
Yoon-Bong Hahn

2019 ◽  
Vol 34 (1) ◽  
pp. 87-92
Author(s):  
Soshi Sato ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
Kenji Ohmori ◽  
Kenji Natori ◽  
...  

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