Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

Yasuyuki Nakajima; Seiji Horiguchi; Masanari Shoji; Yasuhisa Omura

doi:10.1063/1.367271

Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.367271 ◽

1998 ◽

Vol 83 (9) ◽

pp. 4788-4796 ◽

Cited By ~ 9

Author(s):

Yasuyuki Nakajima ◽

Seiji Horiguchi ◽

Masanari Shoji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Gate Capacitance

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Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide-Semiconductor-Field-Effect-Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2644 ◽

2019 ◽

Vol 14 (7) ◽

pp. 1037-1041

Author(s):

Wei-Feng Lü ◽

Liang Dai ◽

Guang-Yi Wang ◽

Mi Lin

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Dopant Fluctuation ◽

Gate Capacitance ◽

Random Dopant

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Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.010110 ◽

2011 ◽

Vol 50 ◽

pp. 010110 ◽

Cited By ~ 3

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Drive Current

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Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

AIP Advances ◽

10.1063/1.5034041 ◽

2018 ◽

Vol 8 (7) ◽

pp. 075203

Author(s):

Hyeon-Bhin Jo ◽

Jung-Ho Park ◽

Seung-Woo Son ◽

Ji-Min Baek ◽

Do-Young Yun ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Investigation ◽

Gate Capacitance

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Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l101 ◽

1995 ◽

Vol 34 (Part 2, No. 1B) ◽

pp. L101-L104 ◽

Cited By ~ 1

Author(s):

C. H. Ling

Keyword(s):

Metal Oxide ◽

Ultraviolet Light ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Carrier ◽

Capacitance Measurements ◽

Gate Capacitance

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Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.010110 ◽

2011 ◽

Vol 50 (1R) ◽

pp. 010110 ◽

Cited By ~ 4

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Drive Current

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Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements

Japanese Journal of Applied Physics ◽

10.7567/jjap.34.l101 ◽

1995 ◽

Vol 34 (1B) ◽

pp. L101 ◽

Cited By ~ 1

Author(s):

C. H. Ling C. H. Ling

Keyword(s):

Metal Oxide ◽

Ultraviolet Light ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Carrier ◽

Capacitance Measurements ◽

Gate Capacitance

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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