Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction

H. H. Liu; X. F. Duan; X. Y. Qi; Q. X. Xu; H. O. Li; H. Qian

doi:10.1063/1.2217136

Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction

Applied Physics Letters ◽

10.1063/1.2217136 ◽

2006 ◽

Vol 88 (26) ◽

pp. 263513 ◽

Cited By ~ 9

Author(s):

H. H. Liu ◽

X. F. Duan ◽

X. Y. Qi ◽

Q. X. Xu ◽

H. O. Li ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Large Angle ◽

Strain Analysis ◽

Convergent Beam Electron Diffraction ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Beam Electron ◽

Convergent Beam

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Study of strained-silicon channel metal–oxide–semiconductor field effect transistors by large angle convergent-beam electron diffraction

Ultramicroscopy ◽

10.1016/j.ultramic.2008.01.002 ◽

2008 ◽

Vol 108 (9) ◽

pp. 816-820 ◽

Cited By ~ 4

Author(s):

H.H. Liu ◽

X.F. Duan ◽

Qiuxia Xu ◽

Bang-Gui Liu

Keyword(s):

Electron Diffraction ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Large Angle ◽

Convergent Beam Electron Diffraction ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Beam Electron ◽

Convergent Beam

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/3/306 ◽

2001 ◽

Vol 16 (3) ◽

pp. 155-159 ◽

Cited By ~ 8

Author(s):

Nobuyuki Sugii ◽

Shinya Yamaguchi ◽

Kiyokazu Nakagawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Carrier Mobility Characteristics and Negative Bias Temperature Instability Reliability in Strained-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.2357984 ◽

2006 ◽

Vol 9 (12) ◽

pp. G351 ◽

Cited By ~ 2

Author(s):

Tung-Ming Pan

Keyword(s):

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Strained Si ◽

Bias Temperature Instability ◽

P Type

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Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy

Journal of Applied Physics ◽

10.1063/1.3436598 ◽

2010 ◽

Vol 107 (12) ◽

pp. 124507 ◽

Cited By ~ 24

Author(s):

Munehisa Takei ◽

Daisuke Kosemura ◽

Kohki Nagata ◽

Hiroaki Akamatsu ◽

Satoru Mayuzumi ◽

...

Keyword(s):

Raman Spectroscopy ◽

Metal Oxide ◽

Spatial Resolution ◽

Field Effect ◽

High Performance ◽

High Spatial Resolution ◽

Field Effect Transistors ◽

Strain Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Characterization of silicon–carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.10.099 ◽

2013 ◽

Vol 529 ◽

pp. 444-448 ◽

Cited By ~ 4

Author(s):

B.-F. Hsieh ◽

S.T. Chang ◽

M.H. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Silicon Carbon

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Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

Applied Physics Letters ◽

10.1063/1.2739324 ◽

2007 ◽

Vol 90 (20) ◽

pp. 202101 ◽

Cited By ~ 8

Author(s):

K. Sawano ◽

A. Fukumoto ◽

Y. Hoshi ◽

Y. Shiraki ◽

J. Yamanaka ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Implantation Technique ◽

Strained Si

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Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strained-Si/Si0.81Ge0.19 n-type metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4718015 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104507 ◽

Cited By ~ 2

Author(s):

C. Mukherjee ◽

S. Sengupta ◽

C. K. Maiti ◽

T. K. Maiti

Keyword(s):

Metal Oxide ◽

Lattice Dynamics ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Electrical Stress ◽

Substrate Strain

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Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging

Applied Physics Letters ◽

10.1063/1.2135388 ◽

2005 ◽

Vol 87 (22) ◽

pp. 222111 ◽

Cited By ~ 11

Author(s):

J. Li ◽

D. Anjum ◽

R. Hull ◽

G. Xia ◽

J. L. Hoyt

Keyword(s):

Electron Diffraction ◽

Metal Oxide ◽

Stress Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Contrast Imaging ◽

Strained Si ◽

Diffraction Contrast

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