High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer

2006 ◽  
Vol 88 (24) ◽  
pp. 242112 ◽  
Author(s):  
Q. Wang ◽  
Manmohan Daggubati ◽  
Rong Yu ◽  
Xiao Feng Zhang
Keyword(s):  
High Temperature ◽  
Silicon Wafer ◽  
Epitaxial Layer ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
Silicon Epitaxial Layer ◽  
Nitrogen Annealing

Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer

1995 ◽  
Vol 77 (7) ◽  
pp. 2974-2977 ◽  
Author(s):  
Jiangbao Wang ◽  
Qiang Xu ◽  
Jian Yuan ◽  
Fang Lu ◽  
Henghui Sun ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Strain Relaxation ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Epitaxial Layer

Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

2015 ◽  
Vol 242 ◽  
pp. 218-223
Author(s):  
Peng Dong ◽  
Xing Bo Liang ◽  
Da Xi Tian ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Enhancement Effect ◽  
Epitaxial Silicon ◽  
High Concentration ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
The One

We report a strategy feasible for improving the internal gettering (IG) capability of iron (Fe) for n/n+ epitaxial silicon wafers using the heavily arsenic (As)-doped Czochralski (CZ) silicon wafers as the substrates. The n/n+ epitaxial silicon wafers were subjected to the two-step anneal of 650 °C/16 h + 1000 °C/16 h following the rapid thermal processing (RTP) at 1250 °C in argon (Ar) or nitrogen (N2) atmosphere. It is found that the prior RTP in N2 atmosphere exhibits much stronger enhancement effect on oxygen precipitation (OP) in the substrates than that in Ar atmosphere, thereby leading to a better IG capability of Fe contamination on the epitaxial wafer. In comparison with the RTP in Ar atmosphere, the one in N2 atmosphere injects not only vacancies but also nitrogen atoms of high concentration into the heavily As-doped silicon substrate. The co-action of vacancy and nitrogen leads to the enhanced OP in the substrate and therefore the better IG capability for the n/n+ epitaxial silicon wafer.

Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures

2009 ◽  
Vol 159-160 ◽  
pp. 145-148 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Jiahe Chen ◽  
Duanlin Que
Keyword(s):  
Silicon Wafer ◽  
High Temperatures ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
Phosphorus Doped

Low-Temperature Infrared Absorption Measurement For Oxygen Concentration and Precipitates In Heavily-Doped Silicon Wafers

1996 ◽  
Vol 442 ◽  
Author(s):  
M. Koizuka ◽  
M. Inaba ◽  
H. Yamada-Kaneta
Keyword(s):  
Heat Treatment ◽  
Oxygen Concentration ◽  
Silicon Crystal ◽  
Ir Absorption ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Precipitation Characteristics ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Absorption Technique

AbstractWe present a new IR absorption technique of measuring the dissolved interstitial oxygen concentration [Oi] and its reduction Δ [Oi] due to oxygen precipitation of the heavily-doped silicon crystal with doping level of about 1019 atoms/cm3. The method consists of the three steps: bonding the silicon wafer to a thick FZ silicon substrate by heat-treatment, thinning the wafer, and measuring the height of the 1136-cm−1 absorption peak of Oi at a temperature below 5 K. For a heavily doped wafer and the heavily doped substrate of an epitaxial wafer, we demonstrate examples of measuring the initial [Oi] and Δ [Oi] due to heat-treatment. Using this method, we investigate oxygen precipitation characteristics of the wafer heavily doped with boron. We found that the enhanced oxygen precipitation due to heavy boron-doping is expected if we perform preanneal at temperatures below 700°C.

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen precipitation behavior in heavily arsenic doped silicon crystals

2017 ◽  
Vol 457 ◽  
pp. 325-330 ◽  
Author(s):  
Stephan Haringer ◽  
Daniela Gambaro ◽  
Maria Porrini
Keyword(s):  
Precipitation Behavior ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Doped Silicon

The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams

1979 ◽  
Vol 54 (2) ◽  
pp. 463-469 ◽  
Author(s):  
L. N. Aeksandrov ◽  
A. S. Ltovich ◽  
E. D. Blorusets
Keyword(s):  
Epitaxial Layer ◽  
Molecular Beams ◽  
Layer Growth ◽  
Silicon Epitaxial Layer
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