Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer

1995 ◽  
Vol 77 (7) ◽  
pp. 2974-2977 ◽  
Author(s):  
Jiangbao Wang ◽  
Qiang Xu ◽  
Jian Yuan ◽  
Fang Lu ◽  
Henghui Sun ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Strain Relaxation ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Epitaxial Layer

Defect States Induced by Rapid Thermal Annealing in Virgin or Implanted Czochralski-Grown Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
M. Remram ◽  
D. Barbier ◽  
J.-F. Joly ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Contacts ◽  
High Dose ◽  
Hole Trap ◽  
Defect States ◽  
Incoherent Light ◽  
Boron Doped ◽  
Doped Silicon ◽  
State Generation

AbstractDefect state generation in either virgin or implanted CZ silicon has been investigated by means of capacitance transient spectroscopy (DLTS) after rapid thermal annealing (RTA), using an incoherent light furnace and variable cycle parameters. No electron traps were dectected with gold Schottky contacts made on virgin phosporous-doped silicon annealed for 5 sec at any temperature. On the otherhand 3 hole trap levels H1(0.45 eV), H2(0.29 eV) and H3(0.31 eV) have been observed in boron-doped silicon (Al Schottky contacts) after a 5 sec temperature plateau between 850 and 1050°C. Peak concentrations ranging from 1013 to 1014 cm−3 were measured after annealing at 1000°C for the three hole traps. By increasing the plateau duration up to 20 sec hole traps were no longer detected in boron-doped silicon. Furthermore in As+ or PF5+-implanted and rapidly annealed N+/P junctions the H3(0.31 eV) level was replaced by another hole trap H4(0.4 eV), which appeared within specific conditions (RTA parameters, implant dose and species). Moreover an electron trap E(0.55 eV) was only detected in the high dose As+-implanted junctions after annealing for 10 sec at 1100°C. The probable metallic origin of the observed defect states and the RTA parameter dependence of the hole trap concentrations suggest gettering and trapping in interstitial sites as possible mechanisms involved in RTA.

Effects of Rapid Thermal Annealing on Heavily Boron Doped Silicon Epitaxial Layers

1994 ◽  
Vol 355 ◽  
Author(s):  
Jianbao Wang ◽  
Qiang Xu ◽  
Fang Lu ◽  
Henghui Sun ◽  
Xun Wang
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layers ◽  
Boron Doped ◽  
Doped Silicon

Effects of Rapid Thermal Annealing on W/Si1−xGex Contacts

1993 ◽  
Vol 320 ◽  
Author(s):  
V. Aubry ◽  
F. Meyer ◽  
R. Laval ◽  
C. Clerc ◽  
P. Warren ◽  
...  
Keyword(s):  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Thermal Reaction ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
Parasitic Effect ◽  
Strained Films

ABSTRACTThermal reaction of W with Si1−xGex films epitaxially grown by Rapid Thermal Chemical Vapor Deposition was investigated in the temperature range 500°C - 1000°C. The samples were annealed either in a Rapid Thermal Annealing (RTA) system or in a conventional furnace, both in flowing nitrogen. The reaction products were investigated by Rutherford Backscattering Spectroscopy (RBS), Energy Dispersive Spectrometry (EDS) and X-ray diffraction (XRD). Sheet resistance measurements were also performed to follow the progress of the reaction. The reaction of W with Si0.67Ge0.33 is similar to that of W with silicon. W reacts with silicon to form tetragonal WSi2. The Ge-content in the silicide is lower than that of the asdeposited alloy. It is shown that an oxygen contamination occurs during conventional annealing and leads to the formation of non homogeneous Si1−x Gex unreacted alloy below the silicide film. Rapid thermal annealing prevents this parasitic effect and the unreacted film remains homogeneous although a slight decrease in the Ge-content is observed. These results are correlated with Schottky barrier height measurements on p-Si0.83Ge0.17 partially strained films. We observed an increase of the barrier height with increasing the temperature for annealing from 500°C to 1000°C. This trend may be explained either by strain relaxation or (and) Ge-content decrease in the unreacted alloy.

Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

1991 ◽  
Vol 224 ◽  
Author(s):  
Akira Usami ◽  
Taichi Natori ◽  
Akira Ito ◽  
Takahide Sugiyama ◽  
Seiya Hirota ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Epitaxial Layers ◽  
Shallow Trap ◽  
Transient Spectroscopy

AbstractIntroduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon

2014 ◽  
Vol 104 (4) ◽  
pp. 042111 ◽  
Author(s):  
D. C. Walter ◽  
B. Lim ◽  
K. Bothe ◽  
V. V. Voronkov ◽  
R. Falster ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Doped
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