Low-Temperature Infrared Absorption Measurement For Oxygen Concentration and Precipitates In Heavily-Doped Silicon Wafers

MRS Proceedings ◽

10.1557/proc-442-31 ◽

1996 ◽

Vol 442 ◽

Cited By ~ 2

Author(s):

M. Koizuka ◽

M. Inaba ◽

H. Yamada-Kaneta

Keyword(s):

Heat Treatment ◽

Oxygen Concentration ◽

Silicon Crystal ◽

Ir Absorption ◽

Interstitial Oxygen ◽

Oxygen Precipitation ◽

Precipitation Characteristics ◽

Doped Silicon ◽

Heavily Doped ◽

Absorption Technique

AbstractWe present a new IR absorption technique of measuring the dissolved interstitial oxygen concentration [Oi] and its reduction Δ [Oi] due to oxygen precipitation of the heavily-doped silicon crystal with doping level of about 1019 atoms/cm3. The method consists of the three steps: bonding the silicon wafer to a thick FZ silicon substrate by heat-treatment, thinning the wafer, and measuring the height of the 1136-cm−1 absorption peak of Oi at a temperature below 5 K. For a heavily doped wafer and the heavily doped substrate of an epitaxial wafer, we demonstrate examples of measuring the initial [Oi] and Δ [Oi] due to heat-treatment. Using this method, we investigate oxygen precipitation characteristics of the wafer heavily doped with boron. We found that the enhanced oxygen precipitation due to heavy boron-doping is expected if we perform preanneal at temperatures below 700°C.

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Oxygen Precipitation Effects in Degenerately – Doped Silicon

MRS Proceedings ◽

10.1557/proc-14-181 ◽

1982 ◽

Vol 14 ◽

Cited By ~ 2

Author(s):

G. A. Rozgonyi ◽

R. J. Jaccodine ◽

C. W. Pearce

Keyword(s):

Electron Microscopy ◽

Heat Treatment ◽

Transmission Electron Microscopy ◽

Low Temperature ◽

Temperature Step ◽

Supersaturation Ratio ◽

Oxygen Precipitation ◽

Transmission Electron ◽

Doped Silicon ◽

High Supersaturation

ABSTRACTIn this paper we report preliminary observations of oxygen precipitation in degenerately-doped silicon using etching, optical microscopy and transmission electron microscopy. It was found that n+ material was resistant to precipitation, but p+ material precipitated readily. A multistep heat treatment starting with a low temperature step to achieve a high supersaturation ratio was sucessfully used to induce precipitation in n+ material.

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Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction

10.1520/f1239-94 ◽

1994 ◽

Author(s):

Keyword(s):

Oxygen Reduction ◽

Silicon Wafers ◽

Test Method ◽

Interstitial Oxygen ◽

Oxygen Precipitation ◽

Precipitation Characteristics

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Effect of Annealing Temperature on the Properties of Silicon Crystal

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.415-417.1323 ◽

2011 ◽

Vol 415-417 ◽

pp. 1323-1326 ◽

Cited By ~ 1

Author(s):

Qiu Yan Hao ◽

Xin Jian Xie ◽

Bing Zhang Wang ◽

Cai Chi Liu

Keyword(s):

Annealing Temperature ◽

Carrier Lifetime ◽

Minority Carrier ◽

Silicon Crystal ◽

Minority Carrier Lifetime ◽

Interstitial Oxygen ◽

Oxygen Precipitation ◽

Oxygen Donor ◽

Infrared Spectrometer ◽

Effect Of Oxygen

In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.

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Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2006.01.046 ◽

2006 ◽

Vol 9 (1-3) ◽

pp. 88-91

Author(s):

Qiuyan Hao ◽

Caichi Liu ◽

Hongdi Zhang ◽

Jianqiang Zhang ◽

Shilong Sun

Keyword(s):

Silicon Crystal ◽

Oxygen Precipitation ◽

Doped Silicon

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Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.169 ◽

2005 ◽

Vol 108-109 ◽

pp. 169-174 ◽

Cited By ~ 1

Author(s):

Jadwiga Bak-Misiuk ◽

Andrzej Misiuk ◽

Barbara Surma ◽

Artem Shalimov ◽

Charalamos A. Londos

Keyword(s):

Oxygen Concentration ◽

Neutron Irradiation ◽

Point Defects ◽

Interstitial Oxygen ◽

Pressure Treatment ◽

X Ray ◽

Effect Of Pressure ◽

Oxygen Precipitation ◽

Ray Methods ◽

High Hydrostatic Pressures

Oxygen precipitation and creation of defects in Czochralski grown silicon with interstitial oxygen concentration 9.4·1017 cm-3, subjected to irradiation with neutrons (5 MeV, dose 1x1017 cm-2) and subsequently treated for 5 h under atmospheric and high hydrostatic pressures (HP, up to 1.1 GPa) at 1270 / 1400 K, were investigated by spectroscopic and X - Ray methods. Point defects created by neutron irradiation stimulate oxygen precipitation and creation of dislocations under HP, especially at 1270 K. The effect of pressure treatment is related to changed concentration and mobility of silicon interstitials and vacancies as well as of the VnOm – type defects.

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Oxygen Precipitation in Heavily Doped Silicon

Journal of The Electrochemical Society ◽

10.1149/1.2086524 ◽

1990 ◽

Vol 137 (2) ◽

pp. 647-652 ◽

Cited By ~ 28

Author(s):

S. K. Bains ◽

D. P. Griffiths ◽

J. G. Wilkes ◽

R. W. Series ◽

K. G. Barraclough

Keyword(s):

Oxygen Precipitation ◽

Doped Silicon ◽

Heavily Doped

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SIMS Measurements of Oxygen in Heavily-Doped Silicon

MRS Proceedings ◽

10.1557/proc-59-73 ◽

1985 ◽

Vol 59 ◽

Cited By ~ 3

Author(s):

R. J. Bleiler ◽

R. S. Hockett ◽

P. Chu ◽

E. Strathman

Keyword(s):

Integrated Circuit ◽

Secondary Ion Mass Spectrometry ◽

Signal To Noise Ratio ◽

Free Carrier Absorption ◽

Background Signal ◽

Oxygen Precipitation ◽

Doped Silicon ◽

Carrier Absorption ◽

Heavily Doped ◽

Secondary Ion

ABSTRACTOxygen precipitation in CZ silicon is known to provide beneficial yield improvements in integrated circuit processing if the location and amount of precipitation can be properly controlled. The concentration of oxygen in the unprocessed silicon substrate is one of the most important variables to control for achieving these improvements. Fourier Transform Infrared Spectroscopy (FTIR) has successfully been used to measure [0] in silicon when the silicon resistivity is greater than about 0.1 Ω-cm. At lower resistivities typical of p+ and n+ substrates used for epi-wafers as free carrier absorption interferes with the FTIR measurement of bulk [0].This work will focus on how to quantitatively measure oxygen in heavily-doped silicon by Secondary Ion Mass Spectrometry (SIMS) with a high sample thruput, low background signal, and tight σ/x distribution. SIMS calibration is performed against FTIR-calibrated substrates with resistivity higher than 0.1Ωcm. Typical background signals as measured in FZ are a factor of 20 below signals in CZ, and the 160− signal in CZ is over 105 count/sec. resulting in an excellent signal-to-noise ratio for each single measurement. Typical thruput is 18 samples per day where each sample is analyzed four to five times to obtain a σ/x of 3% for an oxygen level of 15 ppma (ASTM F121−80).

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