The Physics and Technology of Amorphous SiO2
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Published By Springer US

9781461283010, 9781461310310

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Synthesis of Buried Dielectric Layers in Silicon by Ion Implantation

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_62 ◽

1988 ◽

pp. 487-516

Author(s):

Ian H. Wilson

Keyword(s):

Ion Implantation ◽

Dielectric Layers

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Relationship Between Hole Trapping and Interface

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_59 ◽

1988 ◽

pp. 465-471 ◽

Cited By ~ 2

Author(s):

S. J. Wang ◽

J. M. Sung ◽

S. A. Lyon

Keyword(s):

Hole Trapping

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The Influence of High Temperature Nitrogen Annealing on the Electrical Properties of Plasma Nitrided Oxides

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_54 ◽

1988 ◽

pp. 421-425

Author(s):

J. Camargo da Costa ◽

M. El-Sayed

Keyword(s):

High Temperature ◽

Electrical Properties ◽

Nitrogen Annealing

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Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_48 ◽

1988 ◽

pp. 353-358 ◽

Cited By ~ 1

Author(s):

A. G. Dias ◽

E. Bustarret ◽

R. C. da Silva

Keyword(s):

Thin Films ◽

Silicon Dioxide ◽

Amorphous Silicon ◽

Amorphous Silicon Dioxide

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A Framework for Incorporating Memory Effects of Structural Relaxation in Models for Thermal Oxidation of Silicon

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_42 ◽

1988 ◽

pp. 307-313

Author(s):

R. W. Rendell ◽

K. L. Ngai

Keyword(s):

Thermal Oxidation ◽

Structural Relaxation ◽

Memory Effects

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Influence of Different Preparation Methods on Interfacial (SiO2/Si) Parameters of Very Thin SiO2 Layers

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_40 ◽

1988 ◽

pp. 291-296

Author(s):

Georges Pananakakis ◽

Panagiota Morfouli ◽

Georges Kamarinos

Keyword(s):

Preparation Methods

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Electrical and Interface Properties of MOS Structures of Getter Treated Silicon

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_39 ◽

1988 ◽

pp. 285-289

Author(s):

N. M. Ravindra ◽

Patrick Smith ◽

J. Narayan

Keyword(s):

Interface Properties ◽

Mos Structures

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Metastabile and Multiply-Charged Individual Defects at the Si:SiO2 Interface

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_36 ◽

1988 ◽

pp. 267-272

Author(s):

M. J. Kirton ◽

M. J. Uren ◽

S. Collins

Keyword(s):

Multiply Charged

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On the Relationship Between Thermal Growth and Thickness Inhomogeneities in Very Thin SiO2 Films

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_34 ◽

1988 ◽

pp. 255-258

Author(s):

X. Aymerich ◽

J. Suñé ◽

F. Campabadal ◽

Y. Placencia

Keyword(s):

Sio2 Films ◽

Thermal Growth ◽

The Relationship

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Geometrical Methods in the Theory of Glassses

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_3 ◽

1988 ◽

pp. 37-46

Author(s):

Richard Kerner

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