Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

Kazuyuki Hirama; Shingo Miyamoto; Hiroki Matsudaira; Keisaku Yamada; Hiroshi Kawarada; Toyohiro Chikyo; Hideomi Koinuma; Ken Hasegawa; Hitoshi Umezawa

doi:10.1063/1.2186072

Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

Applied Physics Letters ◽

10.1063/1.2186072 ◽

2006 ◽

Vol 88 (11) ◽

pp. 112117 ◽

Cited By ~ 28

Author(s):

Kazuyuki Hirama ◽

Shingo Miyamoto ◽

Hiroki Matsudaira ◽

Keisaku Yamada ◽

Hiroshi Kawarada ◽

...

Keyword(s):

Aluminum Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text

Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201300290 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1401-1404 ◽

Cited By ~ 7

Author(s):

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

Download Full-text

High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5097338 ◽

2019 ◽

Vol 37 (4) ◽

pp. 041205 ◽

Cited By ~ 1

Author(s):

Daiki Hosomi ◽

Keita Furuoka ◽

Heng Chen ◽

Saki Saito ◽

Toshiharu Kubo ◽

...

Keyword(s):

Breakdown Voltage ◽

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

Download Full-text

Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4810002 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232107 ◽

Cited By ~ 25

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

DanDan Zhao ◽

Kosuke Nagashio ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text

Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

Thin Solid Films ◽

10.1016/0040-6090(83)90429-7 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 107-117 ◽

Cited By ~ 7

Author(s):

T Sawada ◽

H Hasegawa ◽

H Ohno

Keyword(s):

Double Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Optical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

Download Full-text

Fabrication and characterization of metal-insulator-semiconductor field effect transistors using sputtered silicon nitride film as a gate dielectric

International Journal of Electronics ◽

10.1080/00207219408926034 ◽

1994 ◽

Vol 77 (1) ◽

pp. 61-69 ◽

Cited By ~ 2

Author(s):

K. B. SUNDARAM ◽

S. S. SESHAN

Keyword(s):

Silicon Nitride ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Nitride Film ◽

Silicon Nitride Film ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization

Download Full-text

InP metal-insulator-semiconductor field-effect transistors utilizing an amorphous phosphorus gate insulator

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23018 ◽

1987 ◽

Vol 34 (4) ◽

pp. 931-932 ◽

Cited By ~ 1

Author(s):

H.B. Serreze ◽

R. Schachter ◽

D.J. Olego ◽

M. Viscogliosi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text

Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3523362 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A809 ◽

Cited By ~ 9

Author(s):

R. Stoklas ◽

D. Gregušová ◽

Š. Gaži ◽

J. Novák ◽

P. Kordoš

Keyword(s):

Magnetron Sputtering ◽

Field Effect ◽

Field Effect Transistors ◽

Reactive Magnetron Sputtering ◽

Gate Insulator ◽

Reactive Magnetron ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

Download Full-text

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Cited By ~ 16

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

Download Full-text

Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334431 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1956-1960 ◽

Cited By ~ 45

Author(s):

J. A. Van Vechten ◽

J. F. Wager

Keyword(s):

Field Effect ◽

Nearest Neighbor ◽

Field Effect Transistors ◽

Compound Semiconductors ◽

Anion Vacancy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text