Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering

2011 ◽  
Vol 29 (1) ◽  
pp. 01A809 ◽  
Author(s):  
R. Stoklas ◽  
D. Gregušová ◽  
Š. Gaži ◽  
J. Novák ◽  
P. Kordoš
Keyword(s):  
Magnetron Sputtering ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Reactive Magnetron Sputtering ◽  
Gate Insulator ◽  
Reactive Magnetron ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors

scholarly journals Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 723
Author(s):  
Dongmin Keum ◽  
Hyungtak Kim
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Time Dependent ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Time Dependent Dielectric Breakdown ◽  
Vertical Field ◽  
Heterostructure Field Effect Transistors

In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (VGS) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.

Sign in / Sign up

Export Citation Format

Share Document