Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

Choong Hyun Lee; Tomonori Nishimura; Toshiyuki Tabata; DanDan Zhao; Kosuke Nagashio; Akira Toriumi

doi:10.1063/1.4810002

Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4810002 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232107 ◽

Cited By ~ 25

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

DanDan Zhao ◽

Kosuke Nagashio ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Temperature dependence of electron mobility for inversion‐mode InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.338817 ◽

1987 ◽

Vol 61 (1) ◽

pp. 277-283 ◽

Cited By ~ 5

Author(s):

Y. Hirota ◽

M. Okamura ◽

T. Hisaki ◽

E. Yamaguchi

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Inversion Mode

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Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors

Microelectronic Engineering ◽

10.1016/j.mee.2010.10.024 ◽

2011 ◽

Vol 88 (12) ◽

pp. 3459-3461 ◽

Cited By ~ 8

Author(s):

Noriyuki Miyata ◽

Hiroyuki Ishii ◽

Yuji Urabe ◽

Taro Itatani ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201300290 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1401-1404 ◽

Cited By ~ 7

Author(s):

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

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Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2015.07.007 ◽

2015 ◽

Vol 114 ◽

pp. 30-34 ◽

Cited By ~ 7

Author(s):

J.M. Gonzalez-Medina ◽

F.G. Ruiz ◽

E.G. Marin ◽

A. Godoy ◽

F. Gámiz

Keyword(s):

Simulation Study ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

Applied Physics Express ◽

10.1143/apex.2.121101 ◽

2009 ◽

Vol 2 (12) ◽

pp. 121101 ◽

Cited By ~ 43

Author(s):

Hiroyuki Ishii ◽

Noriyuki Miyata ◽

Yuji Urabe ◽

Taro Itatani ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor

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Film deposition temperature dependence of electron mobility for accumulation‐mode InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.343029 ◽

1989 ◽

Vol 65 (3) ◽

pp. 1328-1337 ◽

Cited By ~ 11

Author(s):

Y. Hirota ◽

M. Okamura ◽

E. Yamaguchi ◽

T. Hisaki

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Deposition Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Film Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Accumulation Mode

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Fabrication and characterization of metal-insulator-semiconductor field effect transistors using sputtered silicon nitride film as a gate dielectric

International Journal of Electronics ◽

10.1080/00207219408926034 ◽

1994 ◽

Vol 77 (1) ◽

pp. 61-69 ◽

Cited By ~ 2

Author(s):

K. B. SUNDARAM ◽

S. S. SESHAN

Keyword(s):

Silicon Nitride ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Nitride Film ◽

Silicon Nitride Film ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization

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High Electron Mobility Ge n-Channel Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique

Applied Physics Express ◽

10.1143/apex.3.061301 ◽

2010 ◽

Vol 3 (6) ◽

pp. 061301 ◽

Cited By ~ 16

Author(s):

Tatsuro Maeda ◽

Yukinori Morita ◽

Shinichi Takagi

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Diffusion Technique

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Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

Applied Physics Letters ◽

10.1063/1.2186072 ◽

2006 ◽

Vol 88 (11) ◽

pp. 112117 ◽

Cited By ~ 28

Author(s):

Kazuyuki Hirama ◽

Shingo Miyamoto ◽

Hiroki Matsudaira ◽

Keisaku Yamada ◽

Hiroshi Kawarada ◽

...

Keyword(s):

Aluminum Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Enhancement of effective electron mobility in the channel of InP metal‐insulator‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.99858 ◽

1988 ◽

Vol 53 (7) ◽

pp. 565-567 ◽

Cited By ~ 4

Author(s):

Y. Iwase ◽

F. Arai ◽

T. Sugano

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Effective Electron ◽

Metal Insulator Semiconductor

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