Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Mina J. Hanna; Han Zhao; Jack C. Lee

doi:10.1063/1.4758995

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5097338 ◽

2019 ◽

Vol 37 (4) ◽

pp. 041205 ◽

Cited By ~ 1

Author(s):

Daiki Hosomi ◽

Keita Furuoka ◽

Heng Chen ◽

Saki Saito ◽

Toshiharu Kubo ◽

...

Keyword(s):

Breakdown Voltage ◽

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

Applied Physics Letters ◽

10.1063/1.1412591 ◽

2001 ◽

Vol 79 (17) ◽

pp. 2832-2834 ◽

Cited By ~ 209

Author(s):

X. Hu ◽

A. Koudymov ◽

G. Simin ◽

J. Yang ◽

M. Asif Khan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

IEEE Electron Device Letters ◽

10.1109/led.2003.816574 ◽

2003 ◽

Vol 24 (9) ◽

pp. 541-543 ◽

Cited By ~ 65

Author(s):

V. Adivarahan ◽

M. Gaevski ◽

W.H. Sun ◽

H. Fatima ◽

A. Koudymov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

Journal of Electronic Materials ◽

10.1007/s11664-003-0157-4 ◽

2003 ◽

Vol 32 (5) ◽

pp. 350-354 ◽

Cited By ~ 7

Author(s):

W. S. Tan ◽

P. A. Houston ◽

G. Hill ◽

R. J. Airey ◽

P. J. Parbook

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Sapphire Substrates ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

Chinese Physics B ◽

10.1088/1674-1056/abb22f ◽

2020 ◽

Vol 29 (12) ◽

pp. 127101

Author(s):

Meihua Liu ◽

Zhangwei Huang ◽

Kuan-Chang Chang ◽

Xinnan Lin ◽

Lei Li ◽

...

Keyword(s):

Supercritical Co2 ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3523362 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A809 ◽

Cited By ~ 9

Author(s):

R. Stoklas ◽

D. Gregušová ◽

Š. Gaži ◽

J. Novák ◽

P. Kordoš

Keyword(s):

Magnetron Sputtering ◽

Field Effect ◽

Field Effect Transistors ◽

Reactive Magnetron Sputtering ◽

Gate Insulator ◽

Reactive Magnetron ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2018.05.191 ◽

2018 ◽

Vol 461 ◽

pp. 255-259 ◽

Cited By ~ 3

Author(s):

R. Stoklas ◽

D. Gregušová ◽

S. Hasenöhrl ◽

E. Brytavskyi ◽

M. Ťapajna ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Layer Deposition ◽

Heterostructure Field Effect Transistors

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Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201300290 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1401-1404 ◽

Cited By ~ 7

Author(s):

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

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Low-Frequency Noise Measurements of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

IEEE Electron Device Letters ◽

10.1109/led.2010.2055823 ◽

2010 ◽

Vol 31 (9) ◽

pp. 1041-1043 ◽

Cited By ~ 18

Author(s):

Cemil Kayis ◽

Jacob H. Leach ◽

C. Y. Zhu ◽

Mo Wu ◽

X. Li ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors ◽

Noise Measurements

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Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric

Microelectronics Reliability ◽

10.1016/j.microrel.2004.11.016 ◽

2005 ◽

Vol 45 (5-6) ◽

pp. 961-964 ◽

Cited By ~ 14

Author(s):

Fu-Chien Chiu ◽

Shun-An Lin ◽

Joseph Ya-min Lee

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Silicon System

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