High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Daiki Hosomi; Keita Furuoka; Heng Chen; Saki Saito; Toshiharu Kubo; Takashi Egawa; Makoto Miyoshi

doi:10.1116/1.5097338

High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5097338 ◽

2019 ◽

Vol 37 (4) ◽

pp. 041205 ◽

Cited By ~ 1

Author(s):

Daiki Hosomi ◽

Keita Furuoka ◽

Heng Chen ◽

Saki Saito ◽

Toshiharu Kubo ◽

...

Keyword(s):

Breakdown Voltage ◽

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3523362 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A809 ◽

Cited By ~ 9

Author(s):

R. Stoklas ◽

D. Gregušová ◽

Š. Gaži ◽

J. Novák ◽

P. Kordoš

Keyword(s):

Magnetron Sputtering ◽

Field Effect ◽

Field Effect Transistors ◽

Reactive Magnetron Sputtering ◽

Gate Insulator ◽

Reactive Magnetron ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

Applied Physics Letters ◽

10.1063/1.1412591 ◽

2001 ◽

Vol 79 (17) ◽

pp. 2832-2834 ◽

Cited By ~ 209

Author(s):

X. Hu ◽

A. Koudymov ◽

G. Simin ◽

J. Yang ◽

M. Asif Khan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

IEEE Electron Device Letters ◽

10.1109/led.2003.816574 ◽

2003 ◽

Vol 24 (9) ◽

pp. 541-543 ◽

Cited By ~ 65

Author(s):

V. Adivarahan ◽

M. Gaevski ◽

W.H. Sun ◽

H. Fatima ◽

A. Koudymov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

Journal of Electronic Materials ◽

10.1007/s11664-003-0157-4 ◽

2003 ◽

Vol 32 (5) ◽

pp. 350-354 ◽

Cited By ~ 7

Author(s):

W. S. Tan ◽

P. A. Houston ◽

G. Hill ◽

R. J. Airey ◽

P. J. Parbook

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Sapphire Substrates ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

Chinese Physics B ◽

10.1088/1674-1056/abb22f ◽

2020 ◽

Vol 29 (12) ◽

pp. 127101

Author(s):

Meihua Liu ◽

Zhangwei Huang ◽

Kuan-Chang Chang ◽

Xinnan Lin ◽

Lei Li ◽

...

Keyword(s):

Supercritical Co2 ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2309 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2309-2311 ◽

Cited By ~ 22

Author(s):

Shuichi Yagi ◽

Mitsuaki Shimizu ◽

Hajime Okumura ◽

Hiromichi Ohashi ◽

Yoshiki Yano ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Gate Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage

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AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.084102 ◽

2011 ◽

Vol 50 (8R) ◽

pp. 084102 ◽

Cited By ~ 8

Author(s):

Yoshinori Oshimura ◽

Takayuki Sugiyama ◽

Kenichiro Takeda ◽

Motoaki Iwaya ◽

Tetsuya Takeuchi ◽

...

Keyword(s):

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

High Breakdown Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

Thin Solid Films ◽

10.1016/0040-6090(83)90429-7 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 107-117 ◽

Cited By ~ 7

Author(s):

T Sawada ◽

H Hasegawa ◽

H Ohno

Keyword(s):

Double Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Optical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

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A novel junction field plates AlGaN/GaN heterostructure field effect transistors with high breakdown voltage and Baliga's figure of merit for power electronics application

2018 International Conference on Electronics Technology (ICET) ◽

10.1109/eltech.2018.8401421 ◽

2018 ◽

Cited By ~ 1

Author(s):

Zhiyuan Bai ◽

Jiangfeng Du ◽

Qi Yu

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Field Effect ◽

Figure Of Merit ◽

Field Effect Transistors ◽

High Breakdown Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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