Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

Tuan Quy Nguyen; Hong-An Shih; Masahiro Kudo; Toshi-kazu Suzuki

doi:10.1002/pssc.201300290

Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201300290 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1401-1404 ◽

Cited By ~ 7

Author(s):

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

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Fabrication and characterization of metal-insulator-semiconductor field effect transistors using sputtered silicon nitride film as a gate dielectric

International Journal of Electronics ◽

10.1080/00207219408926034 ◽

1994 ◽

Vol 77 (1) ◽

pp. 61-69 ◽

Cited By ~ 2

Author(s):

K. B. SUNDARAM ◽

S. S. SESHAN

Keyword(s):

Silicon Nitride ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Nitride Film ◽

Silicon Nitride Film ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Low-Frequency Noise in AlTiO/AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors

10.7567/ssdm.2015.m-2-5 ◽

2015 ◽

Author(s):

S.P. Le ◽

T. Ui ◽

T.Q. Nguyen ◽

H.A. Shih ◽

T. Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2019.125395 ◽

2020 ◽

Vol 532 ◽

pp. 125395 ◽

Cited By ~ 1

Author(s):

Taofei Pu ◽

Xiaobo Li ◽

Taowei Peng ◽

Tian Xie ◽

Liuan Li ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Structure ◽

Heterojunction Field Effect Transistors

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III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Applied Physics Letters ◽

10.1063/1.1855403 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032109 ◽

Cited By ~ 16

Author(s):

Y. Cai ◽

Y. G. Zhou ◽

K. J. Chen ◽

K. M. Lau

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4810002 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232107 ◽

Cited By ~ 25

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

DanDan Zhao ◽

Kosuke Nagashio ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric

Microelectronics Reliability ◽

10.1016/j.microrel.2004.11.016 ◽

2005 ◽

Vol 45 (5-6) ◽

pp. 961-964 ◽

Cited By ~ 14

Author(s):

Fu-Chien Chiu ◽

Shun-An Lin ◽

Joseph Ya-min Lee

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Silicon System

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Fabrication and Characterization of InAs Channel Heterojunction Field-Effect Transistors

10.7567/ssdm.1990.b-2-7 ◽

1990 ◽

Author(s):

Kanji Yoh ◽

Toshiaki Moriuchi ◽

Masataka Inoue

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

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Low-frequency Noise of Intrinsic Gated Region in AlN/AlGaN/GaN Metal-insulator-semiconductor Heterojunction Field-effect Transistors

10.7567/ssdm.2014.e-1-5 ◽

2014 ◽

Author(s):

S.P. Le ◽

T.Q. Nguyen ◽

H. Shih ◽

M. Kudo ◽

T. Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Fabrication and Characterization of AlTiO/InAlN/AlN/GaN Metal-Insulator-Semiconductor Field-Effect Transistor

10.7567/ssdm.2015.m-2-6 ◽

2015 ◽

Author(s):

S. Yamaguchi ◽

T. Ui ◽

J. Liang ◽

H.A. Shih ◽

T. Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

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