scholarly journals Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus

2005 ◽  
Vol 86 (1) ◽  
pp. 012105 ◽  
Author(s):  
O. Lopatiuk ◽  
W. Burdett ◽  
L. Chernyak ◽  
K. P. Ip ◽  
Y. W. Heo ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
P Type

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

Electron Injection-Induced Effects in GaN: Physics and Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Leonid Chernyak ◽  
William Burdett
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Luminescent Properties ◽  
Electron Injection ◽  
Pronounced Increase ◽  
Minority Carrier Diffusion Length ◽  
Electron Beam Induced Current ◽  
P Type

AbstractElectron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material's luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.

scholarly journals Photogenerated Carrier Transport Properties in Silicon Photovoltaics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Prakash Uprety ◽  
Indra Subedi ◽  
Maxwell M. Junda ◽  
Robert W. Collins ◽  
Nikolas J. Podraza
Keyword(s):  
Solar Cell ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Transport Parameters ◽  
Majority Carrier ◽  
Optical Hall Effect ◽  
P Type

AbstractElectrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements. Majority carrier transport parameters [carrier concentration (N), mobility (μ), and conductivity effective mass (m*)] are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 and ±1.48 T external magnetic fields and nominally “dark” conditions, the following respective [n, p]-type Si parameters are obtained: N = [(3.6 ± 0.1) × 1018 cm−3, (7.6 ± 0.1) × 1015 cm−3]; μ = [166 ± 6 cm2/Vs, 532 ± 12 cm2/Vs]; and m* = [(0.28 ± 0.03) × me, (0.36 ± 0.02) × me]. All values are within expectations for this device design. Contributions from photogenerated carriers in both regions of the p-n junction are obtained from measurements of the solar cell under “light” 1 sun illumination (AM1.5 solar irradiance spectrum). From analysis of combined dark and light optical Hall effect measurements, photogenerated minority carrier transport parameters [minority carrier concentration (Δp or Δn) and minority carrier mobility (μh or μe)] under 1 sun illumination for both n- and p-type Si components of the solar cell are determined. Photogenerated minority carrier concentrations are [(7.8 ± 0.2) × 1016 cm−3, (2.2 ± 0.2) × 1014 cm−3], and minority carrier mobilities are [331 ± 191 cm2/Vs, 766 ± 331 cm2/Vs], for the [n, p]-type Si, respectively, values that are within expectations from literature. Using the dark majority carrier concentration and the effective equilibrium minority carrier concentration under 1 sun illumination, minority carrier effective lifetime and diffusion length are calculated in the n-type emitter and p-type wafer Si with the results also being consistent with literature. Solar cell device performance parameters including photovoltaic device efficiency, open circuit voltage, fill factor, and short circuit current density are also calculated from these transport parameters obtained via optical Hall effect using the diode equation and PC1D solar cell simulations. The calculated device performance parameters are found to be consistent with direct current-voltage measurement demonstrating the validity of this technique for electrical transport property measurements of the semiconducting layers in complete Si solar cells. To the best of our knowledge, this is the first method that enables determination of both minority and majority carrier transport parameters in both active layers of the p-n junction in a complete solar cell.

scholarly journals Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

2011 ◽  
Vol 110 (5) ◽  
pp. 056108
Author(s):  
C. Schwarz ◽  
E. Flitsiyan ◽  
L. Chernyak ◽  
V. Casian ◽  
R. Schneck ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Forward Bias ◽  
Zno Nanowires ◽  
P Type

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type

Light Effects on Grain Boundary Properties in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu
Keyword(s):  
Experimental Data ◽  
Grain Boundary ◽  
Minority Carrier ◽  
State Density ◽  
Boundary State ◽  
Carrier Recombination ◽  
Boundary Properties ◽  
Light Effects ◽  
Recombination Velocity ◽  
P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

scholarly journals Characteristics of P-Type and N-Type Photoelectrochemical Biosensors: A Case Study for Esophageal Cancer Detection

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1065
Author(s):  
Joseph-Hang Leung ◽  
Hong-Thai Nguyen ◽  
Shih-Wei Feng ◽  
Sofya B. Artemkina ◽  
Vladimir E. Fedorov ◽  
...  
Keyword(s):  
Esophageal Cancer ◽  
Cancer Cells ◽  
Carrier Transport ◽  
X Ray Diffraction ◽  
Photoelectrochemical Response ◽  
Carrier Separation ◽  
Human Esophageal Cancer ◽  
P Type ◽  
Esophageal Cancer Cells

P-type and N-type photoelectrochemical (PEC) biosensors were established in the laboratory to discuss the correlation between characteristic substances and photoactive material properties through the photogenerated charge carrier transport mechanism. Four types of human esophageal cancer cells (ECCs) were analyzed without requiring additional bias voltage. Photoelectrical characteristics were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV–vis reflectance spectroscopy, and photocurrent response analyses. Results showed that smaller photocurrent was measured in cases with advanced cancer stages. Glutathione (L-glutathione reduced, GSH) and Glutathione disulfide (GSSG) in cancer cells carry out redox reactions during carrier separation, which changes the photocurrent. The sensor can identify ECC stages with a certain level of photoelectrochemical response. The detection error can be optimized by adjusting the number of cells, and the detection time of about 5 min allowed repeated measurement.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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