Light Effects on Grain Boundary Properties in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu
Keyword(s):  
Experimental Data ◽  
Grain Boundary ◽  
Minority Carrier ◽  
State Density ◽  
Boundary State ◽  
Carrier Recombination ◽  
Boundary Properties ◽  
Light Effects ◽  
Recombination Velocity ◽  
P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

Grain Boundary Characterization in Polysilicon by Light Beam Induced Current Topography and Image Processing

1987 ◽  
Vol 106 ◽  
Author(s):  
K. Masri ◽  
J. P. Boyeaux ◽  
S. N. Kumar ◽  
L. Mayet ◽  
A. Laugier
Keyword(s):  
Grain Boundary ◽  
Light Beam ◽  
High Performance ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
A Value ◽  
Recombination Velocity ◽  
P Type

ABSTRACTA high performance light-beam-induced-current (LBIC) analyser has been used to determine the recombination velocity at the grain boundary (S) and the minority-carrier diffusion length (L). For this purpose a Schottky diode (Cr/Si) was fabricated using a p-type silicon bicrystal (1Ω cm, Σ13 grain boundary). The contacts were obtained by a “cold” technology. The diffusion length, determined by the method proposed by Ioannou, was subsequently fitted into the model proposed by Marek to evaluate the recombination velocity by the curve-fitting of the experimental and theoretical photocurrent profiles. A value of S = 2.104 cm/s was thus obtained. The influence of the thin oxide layer at the Cr/Si interface is also discussed.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Minority carrier recombination in p-type CdxHg1-xTe

1990 ◽  
Vol 5 (8) ◽  
pp. 836-841 ◽  
Author(s):  
E Adomaitis ◽  
K Grigoras ◽  
A Krotkus
Keyword(s):  
Minority Carrier ◽  
Carrier Recombination ◽  
P Type

Scanning-laser-microscope measurements of minority-carrier diffusion length and surface recombination velocity in polycrystalline silicon

1985 ◽  
Vol 63 (6) ◽  
pp. 870-875 ◽  
Author(s):  
S. Damaskinos ◽  
A. E. Dixon
Keyword(s):  
Polycrystalline Silicon ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Beam Intensity ◽  
Scanning Laser ◽  
Surface Recombination Velocity ◽  
Minority Carrier Diffusion Length ◽  
Spatially Resolved ◽  
Recombination Velocity ◽  
P Type

A scanning laser microscope was used to study the electronic and recombination properties at grain boundaries of both n- and p-type Wacker polycrystalline silicon in a spatially resolved photoconductivity experiment. The light energy falling on the samples was varied over five orders of magnitude from 10−1 to 10−6 mW. For p-type material the measured L decreased with beam intensity from 150 to 60 μm, reaching a constant value at very low beam intensities. The small focal spot of the microscope allowed the measurements to be extended to include n-type samples. Forthese samples L was found to change from 90 to 18 μm with decreasing beam intensity. The surface recombination velocity SGB was evaluated for both samples. For p-type samples it decreased from 25 000 to 6000 cm/s and for n-type samples from 21 000 to 3000 cm/s with decreasing beam intensity. The quasi-Fermi level separation was determined as a function of the excess minority-carrier-concentration density at the grain boundary and found to increase linearly with beam intensity.

Chemical Origin of the Grain Boundary Carrier Recombination in Silicon Bicrystals

1985 ◽  
Vol 59 ◽  
Author(s):  
F. Battistella ◽  
A. Rocher ◽  
A. George
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Direct Relationship ◽  
Minority Carrier ◽  
Neutral Atmosphere ◽  
X Ray ◽  
Heterogeneous Recombination ◽  
Carrier Recombination ◽  
Transmission Electron

ABSTRACTThe minority carrier recombination related to grain boundaries is studied by the SEM/EBIC technique. The specimens investigated are silicon bicrystals obtained by the Czochralski pulling process. The specimens are heated for 2 hours at 750°C in a neutral atmosphere. Heterogeneous recombination of the grain boundaries is then observed.X-Ray topography and Transmission Electron Microscopy (TEM) have been performed to determine the origin of the heterogeneous recombination. A direct relationship between the local recombination along the grain boundary and the precipitates localized at the interface has been established. The chemical origin of the precipitates is discussed.

The Electrical Behavior of Grain Boundaries in Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
C. H. Seager
Keyword(s):  
Grain Boundaries ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Group Iv ◽  
Zero Bias ◽  
Barrier Heights ◽  
Group Iv Semiconductors ◽  
Carrier Recombination ◽  
Primitive State ◽  
Recombination Velocity

ABSTRACTDespite the fact that lattice imaging studies have shown that grain boundaries in group IV semiconductors often have structures which are complicated and inhomogeneous on the scale of tens-tohundreds of angstroms, simple theories assuming uniform double depletion layers have recently been shown to successfully predict many of the majority carrier transport properties of these defects. On the other hand our knowledge of the interaction of grain boundaries with minority carriers is in a considerably more primitive state. I will describe recent attempts to understand the effects of illumination on grain boundary potential barrier heights and the influence of these defects on the optically generated minority carrier population. Quantifying this latter interaction is particularly important in estimating the performance of polycrystalline solar cells. Simple but elegant scanned excitation measurements for measuring s, the minority carrier recombination velocity at grain boundaries, will be reviewed. I will discuss recent measurements of s as a function of temperature and illumination intensity and show how these data can be correlated with zero-bias impedance measurements.

Sintering and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Mn3O4-NiO Varistors

2013 ◽  
Vol 51 (5) ◽  
pp. 363-369
Author(s):  
Youn-Woo Hong ◽  
Young-Jin Lee ◽  
Sei-Ki Kim ◽  
Jin-Ho Kim
Keyword(s):  
Grain Boundary ◽  
Boundary Properties

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

The Effect of Grain Boundary State on Deformation Process Development in Nanostructured Metals Produced by the Methods of Severe Plastic Deformation

2011 ◽  
Vol 683 ◽  
pp. 69-79 ◽  
Author(s):  
Evgeny V. Naydenkin ◽  
Galina P. Grabovetskaya ◽  
Konstantin Ivanov
Keyword(s):  
Plastic Deformation ◽  
Grain Boundary ◽  
Severe Plastic Deformation ◽  
Deformation Process ◽  
Process Development ◽  
Grain Boundary Sliding ◽  
Total Deformation ◽  
Nanostructured Metals ◽  
Boundary State ◽  
Boundary Sliding

In this review the investigations of deformation process development are discussed which were carried out by tension and creep in the temperature range Т<0.4Tm (here Тm is the absolute melting point of material) for nanostructured metals produced by the methods of severe plastic deformation. The contribution of grain boundary sliding to the total deformation in the above temperature interval is also considered. An analysis is made of the effect of grain size and grain boundary state on the evolution of grain boundary sliding and cooperative grain boundary sliding in nanostructured metals.

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