scholarly journals Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

2011 ◽  
Vol 110 (5) ◽  
pp. 056108
Author(s):  
C. Schwarz ◽  
E. Flitsiyan ◽  
L. Chernyak ◽  
V. Casian ◽  
R. Schneck ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Forward Bias ◽  
Zno Nanowires ◽  
P Type

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

scholarly journals Minority carrier transport in p-ZnO nanowires

2011 ◽  
Vol 109 (1) ◽  
pp. 016107 ◽  
Author(s):  
Y. Lin ◽  
M. Shatkhin ◽  
E. Flitsiyan ◽  
L. Chernyak ◽  
Z. Dashevsky ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Zno Nanowires

Electron Injection-Induced Effects in GaN: Physics and Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Leonid Chernyak ◽  
William Burdett
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Luminescent Properties ◽  
Electron Injection ◽  
Pronounced Increase ◽  
Minority Carrier Diffusion Length ◽  
Electron Beam Induced Current ◽  
P Type

AbstractElectron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material's luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.

Importance of electron current in p-type CdTe in CdS/CdTe thin film solar cells at forward bias

2001 ◽  
Vol 668 ◽  
Author(s):  
Jutta Beier ◽  
Marc Köntges ◽  
Peter Nollet ◽  
Stefaan Degrave ◽  
Marc Burgelman
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Minority Carrier ◽  
Voltage Dependence ◽  
Forward Bias ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Dependent Behavior ◽  
Measurement Results ◽  
P Type

ABSTRACTIn previous work [1,2], we modeled the cross-over of the I-V curves of thin film CdS/CdTe solar cells in terms of an electron (minority carrier) current in the vicinity of the back contact. In this work, we focus on the necessary extension of this analytical model based on a series of measurement results. Especially the wavelength and voltage dependence of the current at forward bias is illustrated in these measurements. The various possible causes for this kind of behavior are discussed and modeled. The extensions to the previous model, needed to describe the voltage and wavelength dependent behavior of I-V curves of real CdTe/CdS solar cells, are proposed.

Degradation of Hydrogen-Passivated p-Type Layers in GaAs by Minority Carrier Injection and Reverse Bias Annealing

1990 ◽  
Vol 184 ◽  
Author(s):  
A. J. Tavendale ◽  
S. J. Pearton ◽  
A. A. Williams ◽  
D. Alexiev
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Atomic Hydrogen ◽  
Reverse Bias ◽  
Minority Carrier ◽  
Forward Bias ◽  
Carrier Injection ◽  
Long Term Stability ◽  
P Type

ABSTRACTWe detail experiments showing that acceptor passivation by atomic hydrogen in p-type GaAs is unstable to either illumination, forward bias annealing or reverse bias annealing. The long-term stability of operation of devices employing hydrogen in or near the active region of FETs or quantum-well lasers is therefore questionable. The systematics of acceptor reactivation during minority carrier injection or reverse bias annealing are presented.

scholarly journals Photogenerated Carrier Transport Properties in Silicon Photovoltaics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Prakash Uprety ◽  
Indra Subedi ◽  
Maxwell M. Junda ◽  
Robert W. Collins ◽  
Nikolas J. Podraza
Keyword(s):  
Solar Cell ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Transport Parameters ◽  
Majority Carrier ◽  
Optical Hall Effect ◽  
P Type

AbstractElectrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements. Majority carrier transport parameters [carrier concentration (N), mobility (μ), and conductivity effective mass (m*)] are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 and ±1.48 T external magnetic fields and nominally “dark” conditions, the following respective [n, p]-type Si parameters are obtained: N = [(3.6 ± 0.1) × 1018 cm−3, (7.6 ± 0.1) × 1015 cm−3]; μ = [166 ± 6 cm2/Vs, 532 ± 12 cm2/Vs]; and m* = [(0.28 ± 0.03) × me, (0.36 ± 0.02) × me]. All values are within expectations for this device design. Contributions from photogenerated carriers in both regions of the p-n junction are obtained from measurements of the solar cell under “light” 1 sun illumination (AM1.5 solar irradiance spectrum). From analysis of combined dark and light optical Hall effect measurements, photogenerated minority carrier transport parameters [minority carrier concentration (Δp or Δn) and minority carrier mobility (μh or μe)] under 1 sun illumination for both n- and p-type Si components of the solar cell are determined. Photogenerated minority carrier concentrations are [(7.8 ± 0.2) × 1016 cm−3, (2.2 ± 0.2) × 1014 cm−3], and minority carrier mobilities are [331 ± 191 cm2/Vs, 766 ± 331 cm2/Vs], for the [n, p]-type Si, respectively, values that are within expectations from literature. Using the dark majority carrier concentration and the effective equilibrium minority carrier concentration under 1 sun illumination, minority carrier effective lifetime and diffusion length are calculated in the n-type emitter and p-type wafer Si with the results also being consistent with literature. Solar cell device performance parameters including photovoltaic device efficiency, open circuit voltage, fill factor, and short circuit current density are also calculated from these transport parameters obtained via optical Hall effect using the diode equation and PC1D solar cell simulations. The calculated device performance parameters are found to be consistent with direct current-voltage measurement demonstrating the validity of this technique for electrical transport property measurements of the semiconducting layers in complete Si solar cells. To the best of our knowledge, this is the first method that enables determination of both minority and majority carrier transport parameters in both active layers of the p-n junction in a complete solar cell.

Mechanism of Carrier Transport in n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1119 ◽  
pp. 189-193
Author(s):  
Nathaporn Promros ◽  
Motoki Takahara ◽  
Ryuji Baba ◽  
Tarek M. Mostafa ◽  
Mahmoud Shaban ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Carrier Transport ◽  
Linear Part ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Forward Bias Voltage ◽  
Space Charge Limit ◽  
Current Voltage ◽  
P Type ◽  
Direct Current Sputtering

Preparation of n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions was accomplished by facing-target direct-current sputtering (FTDCS) and measuring their current-voltage characteristic curves at low temperatures ranging from 300 K down to 50 K. A mechanism of carrier transport in the fabricated heterojunctions was investigated based on thermionic emission theory. According to this theory, the ideality factor was calculated from the slope of the linear part of the forward lnJ-V plot. The ideality factor was 1.12 at 300 K and increased to 1.99 at 225 K. The estimated ideality factor implied that a recombination process was the predominant mechanism of carrier transport. When the temperatures decreased below 225 K, the ideality factor was estimated to be higher than two and parameter A was estimated to be constant. The obtained results implied that the mechanism of carrier transport was governed by a trap-assisted multi-step tunneling process. At high forward bias voltage, the predominant mechanism of carrier transport was changed into a space charge limit current process.

scholarly journals Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus

2005 ◽  
Vol 86 (1) ◽  
pp. 012105 ◽  
Author(s):  
O. Lopatiuk ◽  
W. Burdett ◽  
L. Chernyak ◽  
K. P. Ip ◽  
Y. W. Heo ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
P Type

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type
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