Molecular dynamics simulations of void and helium bubble stability in amorphous silicon during heavy-ion bombardment

2004 ◽  
Vol 96 (8) ◽  
pp. 4181-4188 ◽  
Author(s):  
Maria A. Okuniewski ◽  
Yinon Ashkenazy ◽  
Brent J. Heuser ◽  
Robert S. Averback
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Amorphous Silicon ◽  
Ion Bombardment ◽  
Heavy Ion ◽  
Helium Bubble ◽  
Dynamics Simulations

Tight-binding molecular-dynamics simulations of amorphous silicon carbides

2002 ◽  
Vol 66 (19) ◽  
Author(s):  
V. I. Ivashchenko ◽  
P. E. A. Turchi ◽  
V. I. Shevchenko ◽  
L. A. Ivashchenko ◽  
G. V. Rusakov
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Amorphous Silicon ◽  
Tight Binding ◽  
Silicon Carbides ◽  
Dynamics Simulations

Adatom formation and atomic layer growth on Al(111) by ion bombardment: experiments and molecular dynamics simulations

2001 ◽  
Vol 488 (3) ◽  
pp. 346-366 ◽  
Author(s):  
Carsten Busse ◽  
Cemal Engin ◽  
Henri Hansen ◽  
Udo Linke ◽  
Thomas Michely ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Layer Growth ◽  
Dynamics Simulations

Molecular Dynamics Simulations of the Structural, Vibrational and Electronic Properties of Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
R. Biswas ◽  
I. Kwon ◽  
C. M. Soukoulis
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Film Deposition ◽  
Dangling Bond ◽  
Melt Quenching ◽  
Dynamics Simulations ◽  
Si Films ◽  
Gap States

ABSTRACTAmorphous silicon models have been computer-generated by melt-quenching and film deposition molecular dynamics simulations, employing classical interatomic Si-potentials. The structural, vibrational and electronic properties of these models is described. Dangling-bond gap states are well localized whereas, floating bonds gap states are considerably less localized with wavefunction amplitudes on the neighbors of the five-coordinated atom. In contrast to melt-quenched models, the a-Si films displayed voids, a 15–28% lower density than c-Si, and no five- coordinated atoms. A-Si:H models with 5 and 22% hydrogen, and both monohydride and dihydride species, have also been developed.

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