Energetic ion bombardment of SiO2 surfaces: Molecular dynamics simulations

1998 ◽  
Vol 16 (5) ◽  
pp. 3006-3019 ◽  
Author(s):  
Cameron F. Abrams ◽  
David B. Graves
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Ion Bombardment ◽  
Dynamics Simulations

Adatom formation and atomic layer growth on Al(111) by ion bombardment: experiments and molecular dynamics simulations

2001 ◽  
Vol 488 (3) ◽  
pp. 346-366 ◽  
Author(s):  
Carsten Busse ◽  
Cemal Engin ◽  
Henri Hansen ◽  
Udo Linke ◽  
Thomas Michely ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Layer Growth ◽  
Dynamics Simulations

Molecular Dynamics Simulations and Experimental Evidence for Deep Penetration by Channeled Ions During Low-Energy Ion Bombardment of III-V Semiconductors

1991 ◽  
Vol 236 ◽  
Author(s):  
N.G. Stoffel ◽  
S.A. Schwarz ◽  
M.A.A. Pudensi ◽  
K. Kash ◽  
L.T. Florez ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Secondary Ion Mass Spectrometry ◽  
Lattice Energy ◽  
Ion Bombardment ◽  
Device Fabrication ◽  
Low Energy ◽  
Deep Penetration ◽  
Extensive Degradation ◽  
Dynamics Simulations

AbstractMolecular dynamics simulations are used to investigate the formation of deep crystalline damage during the low-energy ion bombardment of semiconductor crystals. The trajectories of primary ions are calculated as they propagated through a model crystal lattice. Energy losses by nuclear recoil and and by electronic excitation are included. For beams of heavy ions at energies below 1 keV, the average penetration range of the simulated trajectories is only a few nanometers. However, a small, but, significant fraction of the ions are found to scatter into <011= axial channels through which they propagate tens of nm below the surface. This effect is used to explain high-resolution secondary ion mass spectrometry and photoluminescence data which reveal deep ion penetration and optical damage on the same length scale. Our results suggest that unintentional ion channeling is a major factor in the extensive degradation of optical and electrical properties of semiconductor surfaces which are exposed to low energy ion bombardment during device fabrication.

Molecular dynamics simulations of ion bombardment processes

1997 ◽  
Vol 13 (11) ◽  
pp. 893-896 ◽  
Author(s):  
L. A. Marqués ◽  
M. Jaraíz ◽  
J. E. Rubio ◽  
J. Vicente ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Ion Bombardment ◽  
Dynamics Simulations
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