Effect of substrate crystalline morphology on the adhesion of plasma enhanced chemical vapor deposited thin silicon oxide coatings on polyamide

2004 ◽  
Vol 95 (10) ◽  
pp. 5429-5434 ◽  
Author(s):  
G. Rochat ◽  
Y. Leterrier ◽  
C. J. G. Plummer ◽  
J.-A. E. Månson ◽  
R. Szoszkiewicz ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Chemical Vapor ◽  
Crystalline Morphology ◽  
Oxide Coatings ◽  
Chemical Vapor Deposited ◽  
Thin Silicon

Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

2002 ◽  
Vol 91 (5) ◽  
pp. 3236-3242 ◽  
Author(s):  
T. G. Kim ◽  
C. N. Whang ◽  
Yohan Sun ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Si Nanocrystals ◽  
Chemical Vapor Deposited

Microbridge Nanoindentation Testing of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films

2004 ◽  
Vol 841 ◽  
Author(s):  
Zhiqiang Cao ◽  
Tong-Yi Zhang ◽  
Xin Zhang
Keyword(s):  
Residual Stresses ◽  
Thermal Annealing ◽  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Residual Deflection ◽  
Compressive Stresses ◽  
Stress Changes ◽  
Chemical Vapor Deposited

ABSTRACTPlasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiOx films. Our theoretical model employed a closed formula of deflection vs. load, considering both substrate deformation and the residual stresses in the thin films. In particular, the non-negligible residual deflection caused by excessive compressive stresses was taken into account. Freestanding microbridges made of PECVD SiOx films were fabricated using bulk micromachining techniques. To simulate the thermal processing in device fabrication, these microbridges were subjected to rapid thermal annealing (RTA) up to 800°C. A microstructure-based mechanism was applied to explain the experimental results of the residual stress changes in PECVD SiOx films after thermal annealing.

scholarly journals Electrochemical Behavior of Chemical Vapor Deposited Protective Aluminum Oxide Coatings on Ti6242 Titanium Alloy

2008 ◽  
Vol 11 (10) ◽  
pp. C55 ◽  
Author(s):  
G. Boisier ◽  
M. Raciulete ◽  
D. Samélor ◽  
N. Pébère ◽  
A. N. Gleizes ◽  
...  
Keyword(s):  
Titanium Alloy ◽  
Aluminum Oxide ◽  
Electrochemical Behavior ◽  
Chemical Vapor ◽  
Oxide Coatings ◽  
Chemical Vapor Deposited

Pentacene Thin Film Transistors and Circuits: Influence of Processing and Device Design

2002 ◽  
Vol 725 ◽  
Author(s):  
D. Knipp ◽  
R. A. Street ◽  
B. Krusor ◽  
J. HO
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Self Assembled Monolayers ◽  
Flexible Substrates ◽  
Thermal Oxide ◽  
Chemical Vapor Deposited ◽  
Structural And Electronic Properties ◽  
Assembled Monolayers

AbstractThe influence of different dielectrics on the structural and electronic properties of pentacene films and TFTs is discussed. The pentacene films were thermally evaporated on inorganic dielectrics compatible with flexible substrates. A strong correlation between morphology and structural properties of the pentacene films and the mobility of the TFTs was observed for all the dielectrics studied. In the case of plasma enhanced chemical vapor deposited (PECVD) silicon nitride and silicon oxide dielectrics the growth of pentacene is mainly determined by the roughness of the dielectric. The roughness inhibits the ordering of pentacene molecules on the surface. However, by optimizing the fabrication process of the dielectrics, we have achieved similar pentacene mobilities on PECVD dielectrics and thermal oxide (0.4 cm2/Vs), without employing self-assembled monolayers like octadecyltrichlorosilane (OTS). An OTS treatment of oxide based dielectrics leads to an increase of the mobility by a factor of 2-3 up to >1cm2/Vs for thermal oxide. Pentacene films on inorganic dielectrics exhibit mobilities from of 0.2-1.2 cm2/Vs and high on/off ratios between 107 and 108.

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