Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

2002 ◽  
Vol 91 (4) ◽  
pp. 1988-1992 ◽  
Author(s):  
Jeremy Thurn ◽  
Robert F. Cook
Keyword(s):  
Thermal Cycling ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Stress Hysteresis

Thickness-dependent Structural Relaxation of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films during Thermal Processing

2004 ◽  
Vol 854 ◽  
Author(s):  
Zhiqiang Cao ◽  
Xin Zhang
Keyword(s):  
Thermal Processing ◽  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Thickness Effect ◽  
Dielectric Films ◽  
Chemical Vapor Deposited ◽  
Amorphous Dielectric ◽  
Stress Hysteresis

ABSTRACTThis paper presents a microstructure-based mechanism which elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then applied to explain a series of experimental results that are related to thermal cycling of amorphous dielectric films, such as plasma-enhanced physical vapor deposited (PECVD) silicon oxide (SiOx) films, including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD SiOx films with a thickness varying from 1 to 40 m were studied, as certain demanding applications in Microelectromechanical Systems (MEMS) require such thick films serving as heat/electrical insulation layers.

Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

2002 ◽  
Vol 91 (5) ◽  
pp. 3236-3242 ◽  
Author(s):  
T. G. Kim ◽  
C. N. Whang ◽  
Yohan Sun ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Si Nanocrystals ◽  
Chemical Vapor Deposited

Microbridge Nanoindentation Testing of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films

2004 ◽  
Vol 841 ◽  
Author(s):  
Zhiqiang Cao ◽  
Tong-Yi Zhang ◽  
Xin Zhang
Keyword(s):  
Residual Stresses ◽  
Thermal Annealing ◽  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Residual Deflection ◽  
Compressive Stresses ◽  
Stress Changes ◽  
Chemical Vapor Deposited

ABSTRACTPlasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiOx films. Our theoretical model employed a closed formula of deflection vs. load, considering both substrate deformation and the residual stresses in the thin films. In particular, the non-negligible residual deflection caused by excessive compressive stresses was taken into account. Freestanding microbridges made of PECVD SiOx films were fabricated using bulk micromachining techniques. To simulate the thermal processing in device fabrication, these microbridges were subjected to rapid thermal annealing (RTA) up to 800°C. A microstructure-based mechanism was applied to explain the experimental results of the residual stress changes in PECVD SiOx films after thermal annealing.

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