Structure and composition of interfacial silicon oxide layer in chemical vapor deposited Y2O3‐SiO2bilayer dielectrics for metal‐insulator‐semiconductor devices

R. N. Sharma; A. C. Rastogi

doi:10.1063/1.357377

Structure and composition of interfacial silicon oxide layer in chemical vapor deposited Y2O3‐SiO2bilayer dielectrics for metal‐insulator‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.357377 ◽

1994 ◽

Vol 76 (7) ◽

pp. 4215-4224 ◽

Cited By ~ 17

Author(s):

R. N. Sharma ◽

A. C. Rastogi

Keyword(s):

Oxide Layer ◽

Silicon Oxide ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Metal Insulator ◽

Silicon Oxide Layer ◽

Metal Insulator Semiconductor ◽

Chemical Vapor Deposited

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Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor-based metal–insulator–semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589003 ◽

1996 ◽

Vol 14 (4) ◽

pp. 2674 ◽

Cited By ~ 39

Author(s):

D. G. Park

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Study of interfacial oxide layer of LaAlO3 gate dielectrics on Si for metal–insulator–semiconductor devices

Applied Physics A ◽

10.1007/s00339-003-2266-6 ◽

2005 ◽

Vol 80 (3) ◽

pp. 641-644 ◽

Cited By ~ 3

Author(s):

H. Ling ◽

X. Lu ◽

A. Li ◽

D. Wu ◽

Q. Shao ◽

...

Keyword(s):

Oxide Layer ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP‐based metal‐insulator‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.100426 ◽

1988 ◽

Vol 53 (14) ◽

pp. 1291-1293 ◽

Cited By ~ 14

Author(s):

C. Licoppe ◽

J. M. Moison ◽

Y. I. Nissim ◽

J. L. Regolini ◽

D. Bensahel

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Surface Reactions ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices

Journal of The Electrochemical Society ◽

10.1149/1.2132639 ◽

1976 ◽

Vol 123 (10) ◽

pp. 1570-1573 ◽

Cited By ~ 40

Author(s):

E. Kaplan ◽

M. Balog ◽

D. Frohman‐Bentchkowsky

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Tantalum Pentoxide ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of (NH[sub 4])[sub 2]S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1667504 ◽

2004 ◽

Vol 22 (3) ◽

pp. 1027 ◽

Cited By ~ 10

Author(s):

A. Jaouad ◽

V. Aimez ◽

Ç. Aktik ◽

K. Bellatreche ◽

A. Souifi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Low Frequency ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Frequency Plasma

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Interface properties of plasma‐enhanced chemical vapor deposited SiOxNy/n‐GaAs metal‐insulator‐semiconductor system

Journal of Applied Physics ◽

10.1063/1.336765 ◽

1986 ◽

Vol 59 (11) ◽

pp. 3778-3782 ◽

Cited By ~ 5

Author(s):

T. Y. Chou ◽

M. S. Lin

Keyword(s):

Chemical Vapor ◽

Interface Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Chemical Vapor Deposited ◽

Semiconductor System

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ChemInform Abstract: CHEMICAL VAPOR DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES

Chemischer Informationsdienst ◽

10.1002/chin.197705018 ◽

1977 ◽

Vol 8 (5) ◽

pp. no-no

Author(s):

E. KAPLAN ◽

M. BALOG ◽

D. FROHMAN-BENTCHKOWSKY

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Tantalum Pentoxide ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1535 ◽

2002 ◽

Vol 389-393 ◽

pp. 1535-0 ◽

Cited By ~ 1

Author(s):

Kevin Matocha ◽

T. Paul Chow ◽

Ronald J. Gutmann

Keyword(s):

Gallium Nitride ◽

Chemical Vapor ◽

Low Pressure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.331380 ◽

1982 ◽

Vol 53 (7) ◽

pp. 5037-5043 ◽

Cited By ~ 38

Author(s):

Yukihiro Hirota ◽

Takeshi Kobayashi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Insulators

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Deposition of single phase, homogeneous silicon oxynitride by remote plasma-enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587792 ◽

1994 ◽

Vol 12 (4) ◽

pp. 2504 ◽

Cited By ~ 36

Author(s):

Y. Ma

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Single Phase ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Silicon Oxynitride ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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