Inelastic electron tunneling spectrometer to characterize metal–oxide–semiconductor devices with ultrathin oxides

C. Petit; G. Salace

doi:10.1063/1.1611995

Inelastic electron tunneling spectrometer to characterize metal–oxide–semiconductor devices with ultrathin oxides

Review of Scientific Instruments ◽

10.1063/1.1611995 ◽

2003 ◽

Vol 74 (10) ◽

pp. 4462-4467 ◽

Cited By ~ 17

Author(s):

C. Petit ◽

G. Salace

Keyword(s):

Metal Oxide ◽

Electron Tunneling ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Ultrathin Oxides ◽

Inelastic Electron Tunneling

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Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.1462423 ◽

2002 ◽

Vol 91 (9) ◽

pp. 5896-5901 ◽

Cited By ~ 15

Author(s):

G. Salace ◽

C. Petit ◽

D. Vuillaume

Keyword(s):

Metal Oxide ◽

Electron Tunneling ◽

Semiconductor Devices ◽

Tunneling Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Inelastic Electron Tunneling Spectroscopy ◽

Inelastic Electron Tunneling ◽

Electron Tunneling Spectroscopy

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Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-κ gate dielectrics

Applied Physics Letters ◽

10.1063/1.2831717 ◽

2008 ◽

Vol 92 (1) ◽

pp. 012113 ◽

Cited By ~ 7

Author(s):

S. L. You ◽

C. C. Huang ◽

C. J. Wang ◽

H. C. Ho ◽

J. Kwo ◽

...

Keyword(s):

Metal Oxide ◽

Electron Tunneling ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Spectroscopy Study ◽

Inelastic Electron Tunneling Spectroscopy ◽

Inelastic Electron Tunneling ◽

Electron Tunneling Spectroscopy

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Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress

Journal of Applied Physics ◽

10.1063/1.1775299 ◽

2004 ◽

Vol 96 (9) ◽

pp. 5042-5049 ◽

Cited By ~ 13

Author(s):

C. Petit ◽

G. Salace ◽

D. Vuillaume

Keyword(s):

Tunnel Junctions ◽

Electron Tunneling ◽

Accurate Determination ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Inelastic Electron Tunneling Spectroscopy ◽

Electrical Stress ◽

Inelastic Electron Tunneling ◽

Electron Tunneling Spectroscopy

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Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

Applied Physics Letters ◽

10.1063/1.2219140 ◽

2006 ◽

Vol 88 (26) ◽

pp. 262909 ◽

Cited By ~ 2

Author(s):

Chih-Feng Huang ◽

Bing-Yue Tsui ◽

Pei-Jer Tzeng ◽

Lurng-Shehng Lee ◽

Ming-Jinn Tsai

Keyword(s):

Thermal Stability ◽

Electron Tunneling ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Inelastic Electron Tunneling Spectroscopy ◽

Semiconductor Structures ◽

Inelastic Electron Tunneling ◽

Electron Tunneling Spectroscopy ◽

Thermal Stability Of

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Cited By ~ 10

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Plasma Nitridation

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Cited By ~ 1

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Cited By ~ 4

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

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