Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress

2004 ◽  
Vol 96 (9) ◽  
pp. 5042-5049 ◽  
Author(s):  
C. Petit ◽  
G. Salace ◽  
D. Vuillaume
Sign in / Sign up

Export Citation Format

Share Document