Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices

G. Salace; C. Petit; D. Vuillaume

doi:10.1063/1.1462423

Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.1462423 ◽

2002 ◽

Vol 91 (9) ◽

pp. 5896-5901 ◽

Cited By ~ 15

Author(s):

G. Salace ◽

C. Petit ◽

D. Vuillaume

Keyword(s):

Metal Oxide ◽

Electron Tunneling ◽

Semiconductor Devices ◽

Tunneling Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Inelastic Electron Tunneling Spectroscopy ◽

Inelastic Electron Tunneling ◽

Electron Tunneling Spectroscopy

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Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-κ gate dielectrics

Applied Physics Letters ◽

10.1063/1.2831717 ◽

2008 ◽

Vol 92 (1) ◽

pp. 012113 ◽

Cited By ~ 7

Author(s):

S. L. You ◽

C. C. Huang ◽

C. J. Wang ◽

H. C. Ho ◽

J. Kwo ◽

...

Keyword(s):

Metal Oxide ◽

Electron Tunneling ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Spectroscopy Study ◽

Inelastic Electron Tunneling Spectroscopy ◽

Inelastic Electron Tunneling ◽

Electron Tunneling Spectroscopy

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Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress

Journal of Applied Physics ◽

10.1063/1.1775299 ◽

2004 ◽

Vol 96 (9) ◽

pp. 5042-5049 ◽

Cited By ~ 13

Author(s):

C. Petit ◽

G. Salace ◽

D. Vuillaume

Keyword(s):

Tunnel Junctions ◽

Electron Tunneling ◽

Accurate Determination ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Inelastic Electron Tunneling Spectroscopy ◽

Electrical Stress ◽

Inelastic Electron Tunneling ◽

Electron Tunneling Spectroscopy

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Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

Applied Physics Letters ◽

10.1063/1.2219140 ◽

2006 ◽

Vol 88 (26) ◽

pp. 262909 ◽

Cited By ~ 2

Author(s):

Chih-Feng Huang ◽

Bing-Yue Tsui ◽

Pei-Jer Tzeng ◽

Lurng-Shehng Lee ◽

Ming-Jinn Tsai

Keyword(s):

Thermal Stability ◽

Electron Tunneling ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Inelastic Electron Tunneling Spectroscopy ◽

Semiconductor Structures ◽

Inelastic Electron Tunneling ◽

Electron Tunneling Spectroscopy ◽

Thermal Stability Of

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Inelastic electron tunneling spectrometer to characterize metal–oxide–semiconductor devices with ultrathin oxides

Review of Scientific Instruments ◽

10.1063/1.1611995 ◽

2003 ◽

Vol 74 (10) ◽

pp. 4462-4467 ◽

Cited By ~ 17

Author(s):

C. Petit ◽

G. Salace

Keyword(s):

Metal Oxide ◽

Electron Tunneling ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inelastic Electron ◽

Ultrathin Oxides ◽

Inelastic Electron Tunneling

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