Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

2002 ◽  
Vol 81 (4) ◽  
pp. 709-711 ◽  
Author(s):  
M. Houssa ◽  
J. L. Autran ◽  
A. Stesmans ◽  
M. M. Heyns
Keyword(s):  
Positive Charge ◽  
Gate Dielectric ◽  
Charge Generation ◽  
Interface Defect

Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 229-232 ◽  
Author(s):  
Anders Hallén ◽  
Sethu Saveda Suvanam
Keyword(s):  
Proton Irradiation ◽  
Silicon Oxide ◽  
Positive Charge ◽  
Gate Dielectric ◽  
Radiation Hardness ◽  
Flat Band ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
Radiation Hard ◽  
Mos Structures

The radiation hardness of two dielectrics, SiO2and Al2O3, deposited on low doped, n-type 4H-SiC epitaxial layers has been investigated by exposing MOS structures involving these materials to MeV proton irradiation. The samples are examined by capacitance voltage (CV) measurements and, from the flat band voltage shift, it is concluded that positive charge is induced in the exposed structures detectable for fluence above 1×1011cm-2. The positive charge increases with proton fluence, but the SiO2/4H-SiC structures are slightly more sensitive, showing that Al2O3can provide a more radiation hard passivation, or gate dielectric for 4H-SiC devices.

Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films

1991 ◽  
Vol 219 ◽  
Author(s):  
Jerzy Kanicki ◽  
Mythili Sankaran
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Charge Transport ◽  
Amorphous Silicon ◽  
Positive Charge ◽  
Gate Bias ◽  
Charge Generation ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

ABSTRACTWe report on the illumination time dependence of the generation of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to sub-bandgap illumination at different temperature in vacuum. The influence of film thickness and gate bias applied during illumination on the generation of positive charge is also described. We have found that a stretched-exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results.

Positive charge generation in metal‐oxide‐semiconductor capacitors

1991 ◽  
Vol 69 (4) ◽  
pp. 2512-2521 ◽  
Author(s):  
L. P. Trombetta ◽  
F. J. Feigl ◽  
R. J. Zeto
Keyword(s):  
Metal Oxide ◽  
Positive Charge ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Generation

Positive Charge Generation at aSiO2/SiInterface due to Bombardment with Metastable Atoms

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 6718-6721 ◽  
Author(s):  
Tetsuo Ono ◽  
Naoshi Itabashi ◽  
Isao Ochiai ◽  
Seiji Yamamoto ◽  
Kozou Mochiji
Keyword(s):  
Positive Charge ◽  
Charge Generation

Nanostructural Systems Developed with Positive Charge Generation to Drug Delivery

2014 ◽  
Vol 3 (8) ◽  
pp. 1162-1181 ◽  
Author(s):  
Fei-Fei An ◽  
Weipeng Cao ◽  
Xing-Jie Liang
Keyword(s):  
Drug Delivery ◽  
Positive Charge ◽  
Charge Generation
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