Nanostructural Systems Developed with Positive Charge Generation to Drug Delivery

2014 ◽  
Vol 3 (8) ◽  
pp. 1162-1181 ◽  
Author(s):  
Fei-Fei An ◽  
Weipeng Cao ◽  
Xing-Jie Liang
1991 ◽  
Vol 219 ◽  
Author(s):  
Jerzy Kanicki ◽  
Mythili Sankaran

ABSTRACTWe report on the illumination time dependence of the generation of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to sub-bandgap illumination at different temperature in vacuum. The influence of film thickness and gate bias applied during illumination on the generation of positive charge is also described. We have found that a stretched-exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results.


1991 ◽  
Vol 69 (4) ◽  
pp. 2512-2521 ◽  
Author(s):  
L. P. Trombetta ◽  
F. J. Feigl ◽  
R. J. Zeto

2002 ◽  
Vol 81 (4) ◽  
pp. 709-711 ◽  
Author(s):  
M. Houssa ◽  
J. L. Autran ◽  
A. Stesmans ◽  
M. M. Heyns

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 6718-6721 ◽  
Author(s):  
Tetsuo Ono ◽  
Naoshi Itabashi ◽  
Isao Ochiai ◽  
Seiji Yamamoto ◽  
Kozou Mochiji

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