Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors

2002 ◽  
Vol 91 (11) ◽  
pp. 9198-9203 ◽  
Author(s):  
Ching-Wu Wang ◽  
Shih-Fang Chen ◽  
Guan-Ting Chen
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Gamma Ray ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Irradiation Effects ◽  
Gamma Ray Irradiation

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

2018 ◽  
Vol 112 (2) ◽  
pp. 023503 ◽  
Author(s):  
Man Hoi Wong ◽  
Akinori Takeyama ◽  
Takahiro Makino ◽  
Takeshi Ohshima ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Radiation Hardness ◽  
Oxide Semiconductor ◽  
Gamma Ray Irradiation

scholarly journals Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 661
Author(s):  
Man Ding
Keyword(s):  
Metal Oxide ◽  
Total Dose ◽  
Leakage Current ◽  
Gamma Ray ◽  
Charge Trapping ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trapping Efficiency ◽  
Semiconductor Structures ◽  
Radiation Induced

The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al2O3 based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4 Mrad(Si). The generation, transportation and trapping characteristics of radiation induced charges were studied by using electronic, physical and chemical methods. Firstly, the radiation induced trapped charge density in Al2O3 is up to 1012 cm−2, with the effective trapping efficiency of 7–20% under irradiation. Secondly, the leakage current through Al2O3 changes little with the increase of radiation total dose. Thirdly, oxygen vacancy in Al2O3 and O dangling bonds and Al-Si metallic bonds at Al2O3/Si interface are dominant radiation induced defects in Al2O3/Si system, and the valence band offset between Al2O3 and Si is found to decrease after irradiation. From the results we can see that Al2O3 is radiation resistant from the aspect of leakage current and crystallization characteristics, but the radiation induced charge trapping and new defects in Al2O3/Si structure cannot be ignored. This paper provides a reference for the space application of Al2O3 based MOS devices.

scholarly journals Physico-chemical processes in Vertical-Double-Diffused Metal-Oxide-Semiconductor Field Effect Transistors induced by gamma-ray irradiation and post-irradiation annealing

2015 ◽  
Vol 13 (1) ◽  
pp. 13-27
Author(s):  
Milic Pejovic
Keyword(s):  
Elevated Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Chemical Processes ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Gamma Ray Irradiation

The behavior of commercial power Vertical-Double-Diffused Metal Oxide Semiconductor Field Effect Transistors (VDMOSFETs) during gamma-ray irradiation and subsequent annealing at room and elevated temperature was investigated. The densities of radiation-induced fixed traps and switching traps were determined from the sub-threshold I-V curves using the midgap technique. It was shown that the creation of fixed traps dominated during irradiation. The experimental results have also proved the existence of latent switching traps buildup process during annealing at an elevated temperature. This increase correlated with the decrease in fixed trap density. Physical and chemical processes responsible for the threshold voltage shift during irradiation have been analyzed on the basis of interactions between secondary electrons released by gamma photons with covalent bonds Sio - O and Sio - Sio. H-W model has been used for the explanation of processes leading to latent switching traps buildup at an elevated temperature and its passivation at late annealing times.

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