Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

2018 ◽  
Vol 112 (2) ◽  
pp. 023503 ◽  
Author(s):  
Man Hoi Wong ◽  
Akinori Takeyama ◽  
Takahiro Makino ◽  
Takeshi Ohshima ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Radiation Hardness ◽  
Oxide Semiconductor ◽  
Gamma Ray Irradiation

scholarly journals Physico-chemical processes in Vertical-Double-Diffused Metal-Oxide-Semiconductor Field Effect Transistors induced by gamma-ray irradiation and post-irradiation annealing

2015 ◽  
Vol 13 (1) ◽  
pp. 13-27
Author(s):  
Milic Pejovic
Keyword(s):  
Elevated Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Chemical Processes ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Gamma Ray Irradiation

The behavior of commercial power Vertical-Double-Diffused Metal Oxide Semiconductor Field Effect Transistors (VDMOSFETs) during gamma-ray irradiation and subsequent annealing at room and elevated temperature was investigated. The densities of radiation-induced fixed traps and switching traps were determined from the sub-threshold I-V curves using the midgap technique. It was shown that the creation of fixed traps dominated during irradiation. The experimental results have also proved the existence of latent switching traps buildup process during annealing at an elevated temperature. This increase correlated with the decrease in fixed trap density. Physical and chemical processes responsible for the threshold voltage shift during irradiation have been analyzed on the basis of interactions between secondary electrons released by gamma photons with covalent bonds Sio - O and Sio - Sio. H-W model has been used for the explanation of processes leading to latent switching traps buildup at an elevated temperature and its passivation at late annealing times.

scholarly journals The gamma-ray irradiation sensitivity and dosimetric information instability of RADFET dosimeter

2013 ◽  
Vol 28 (4) ◽  
pp. 415-421 ◽  
Author(s):  
Milic Pejovic
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gamma Ray Irradiation

The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or pMOS dosimeters) with gate oxide thicknesses of 400 nm and 1 mm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift DVT on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between DVT and D during irradiation, so that the sensitivity can be defined as DVT/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150?C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150?C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also.

Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

2016 ◽  
Vol 858 ◽  
pp. 860-863 ◽  
Author(s):  
Takuma Matsuda ◽  
Takashi Yokoseki ◽  
Satoshi Mitomo ◽  
Koichi Murata ◽  
Takahiro Makino ◽  
...  
Keyword(s):  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Absorbed Dose ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Radiation Response ◽  
Electrical Characteristics ◽  
Gamma Ray Irradiation

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150°C even after irradiated at 10.4 MGy.

Increased Radiation Hardness of Short-Channel Electron-Irradiated Si1-xGexSource/Drain p-Type Metal Oxide Semiconductor Field-Effect Transistors at Higher Ge Content

2013 ◽  
Vol 52 (9R) ◽  
pp. 094201
Author(s):  
Toshiyuki Nakashima ◽  
Masashi Yoneoka ◽  
Isao Tsunoda ◽  
Kenichiro Takakura ◽  
Mireia Bargallo Gonzalez ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Radiation Hardness ◽  
Oxide Semiconductor ◽  
Short Channel ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document