Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide

2001 ◽  
Vol 90 (6) ◽  
pp. 3038-3041 ◽  
Author(s):  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Masahito Yoshikawa
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gamma Ray ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gamma Ray Irradiation ◽  
Effect Transistor

scholarly journals Design and Analysis of Heavily Doped n+ Pocket Asymmetrical Junction-Less Double Gate MOSFET for Biomedical Applications

2020 ◽  
Vol 10 (7) ◽  
pp. 2499 ◽  
Author(s):  
Namrata Mendiratta ◽  
Suman Lata Tripathi ◽  
Sanjeevikumar Padmanaban ◽  
Eklas Hossain
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Biomedical Applications ◽  
Field Effect Transistor ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
Heavily Doped ◽  
Effect Transistor

The Complementary Metal-Oxide Semiconductor (CMOS) technology has evolved to a great extent and is being used for different applications like environmental, biomedical, radiofrequency and switching, etc. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensors are used for detecting various enzymes, molecules, pathogens and antigens efficiently with a less time-consuming process involved in comparison to other options. Early-stage detection of disease is easily possible using Field-Effect Transistor (FET) based biosensors. In this paper, a steep subthreshold heavily doped n+ pocket asymmetrical junctionless MOSFET is designed for biomedical applications by introducing a nanogap cavity region at the gate-oxide interface. The nanogap cavity region is introduced in such a manner that it is sensitive to variation in biomolecules present in the cavity region. The analysis is based on dielectric modulation or changes due to variation in the bio-molecules present in the environment or the human body. The analysis of proposed asymmetrical junctionless MOSFET with nanogap cavity region is carried out with different dielectric materials and variations in cavity length and height inside the gate–oxide interface. Further, this device also showed significant variation for changes in different introduced charged particles or region materials, as simulated through a 2D visual Technology Computer-Aided Design (TCAD) device simulator.

Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 837-842
Author(s):  
Xiao Chuan Deng ◽  
Hao Zhu ◽  
Xuan Li ◽  
Xiao Jie Xu ◽  
Kun Zhou ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Pulse ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Safe Operation ◽  
Effect Transistor ◽  
The Impact

In this paper, avalanche ruggedness of the commercial 1.2kV 45mΩ asymmetric silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is investigated by single-pulse unclamped inductive switching (UIS) test. The avalanche safe operation area (SOA) of the MOSFET is established. The impact of inductance and temperature on avalanche capability is exhibited, which is valuable for many application circuits. The variation in critical avalanche energy with peak avalanche current, peak avalanche current with avalanche time, and temperatures dependence of critical avalanche energy are confirmed.

Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 5926-5931
Author(s):  
Masahiro Shimizu ◽  
Takashi Kuroi ◽  
Masahide Inuishi ◽  
Hideaki Arima ◽  
Haruhiko Abe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Gate ◽  
Effect Transistor
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