Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By Springer Berlin Heidelberg

9783642848063, 9783642848049

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Selective Growth of SiC and Application to Heterojunction Devices

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_61 ◽

1992 ◽

pp. 411-416 ◽

Cited By ~ 9

Author(s):

S. Nishino ◽

H. Tanaka ◽

K. Takahashi ◽

J. Saraie

Keyword(s):

Selective Growth ◽

Heterojunction Devices

Download Full-text

Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_3 ◽

1992 ◽

pp. 23-30 ◽

Cited By ~ 5

Author(s):

J. A. Powell ◽

D. J. Larkin ◽

J. B. Petit ◽

J. H. Edgar

Keyword(s):

Tilt Angle ◽

Sic Films

Download Full-text

Effects of CH3Cl Gas on Heteroepitaxial Growth of β-SiC on Si(111) by Chemical Vapor Deposition

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_7 ◽

1992 ◽

pp. 60-65

Author(s):

K. Ikoma ◽

M. Yamanaka ◽

H. Yamaguchi ◽

Y. Shichi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth

Download Full-text

Graded-Gap and Quantum-Well Injection a-SiC:H p-i-n Light-Emitting Diodes

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_56 ◽

1992 ◽

pp. 381-386

Author(s):

Jyh-Wong Hong ◽

Tean-Sen Jen ◽

Sui-Liang Ning ◽

Nerng-Fu Shin ◽

Chun-Yen Chang

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

Light Emitting

Download Full-text

Simulations of Ge and C Implantations to Form Si1-χGeχ BJT

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_54 ◽

1992 ◽

pp. 368-373

Author(s):

A. Gupta ◽

J. W. Waters ◽

M. M. Rahman ◽

C. Y. Yang

Download Full-text

High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_50 ◽

1992 ◽

pp. 344-351 ◽

Cited By ~ 2

Author(s):

J. A. Edmond ◽

H.-S. Kong ◽

C. H. Carter

Keyword(s):

High Temperature

Download Full-text

Electrical Characterization of PiN Diode Structures in 6H-SiC

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_49 ◽

1992 ◽

pp. 338-343 ◽

Cited By ~ 1

Author(s):

C. T. Gardner ◽

J. A. Cooper ◽

M. R. Melloch ◽

J. W. Palmour ◽

C. H. Carter

Keyword(s):

Electrical Characterization ◽

Pin Diode

Download Full-text

A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_46 ◽

1992 ◽

pp. 322-325

Author(s):

K. Sasaki ◽

T. Miyajima ◽

S. Furukawa

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Sic Films

Download Full-text

Impact of SiC on Power Devices

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_44 ◽

1992 ◽

pp. 305-313 ◽

Cited By ~ 6

Author(s):

B. J. Baliga

Keyword(s):

Power Devices

Download Full-text

Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_41 ◽

1992 ◽

pp. 281-286 ◽

Cited By ~ 6

Author(s):

T. Miyajima ◽

K. Sasaki ◽

S. Furukawa

Keyword(s):

Optimum Condition ◽

Film Formation ◽

Plasma Cvd ◽

Ecr Plasma ◽

Cvd Method ◽

Sic Film

Download Full-text

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IVLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Selective Growth of SiC and Application to Heterojunction Devices

Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers

Effects of CH3Cl Gas on Heteroepitaxial Growth of β-SiC on Si(111) by Chemical Vapor Deposition

Graded-Gap and Quantum-Well Injection a-SiC:H p-i-n Light-Emitting Diodes

Simulations of Ge and C Implantations to Form Si1-χGeχ BJT

High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC

Electrical Characterization of PiN Diode Structures in 6H-SiC

A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors

Impact of SiC on Power Devices

Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV
Latest Publications