Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation

2009 ◽  
Author(s):  
T. Ohshima ◽  
S. Onoda ◽  
T. Hirao ◽  
Y. Takahashi ◽  
G. Vizkelethy ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gamma Ray ◽  
Ion Beam ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Gamma Ray Irradiation

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

2018 ◽  
Vol 112 (2) ◽  
pp. 023503 ◽  
Author(s):  
Man Hoi Wong ◽  
Akinori Takeyama ◽  
Takahiro Makino ◽  
Takeshi Ohshima ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Radiation Hardness ◽  
Oxide Semiconductor ◽  
Gamma Ray Irradiation

scholarly journals Physico-chemical processes in Vertical-Double-Diffused Metal-Oxide-Semiconductor Field Effect Transistors induced by gamma-ray irradiation and post-irradiation annealing

2015 ◽  
Vol 13 (1) ◽  
pp. 13-27
Author(s):  
Milic Pejovic
Keyword(s):  
Elevated Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Chemical Processes ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Gamma Ray Irradiation

The behavior of commercial power Vertical-Double-Diffused Metal Oxide Semiconductor Field Effect Transistors (VDMOSFETs) during gamma-ray irradiation and subsequent annealing at room and elevated temperature was investigated. The densities of radiation-induced fixed traps and switching traps were determined from the sub-threshold I-V curves using the midgap technique. It was shown that the creation of fixed traps dominated during irradiation. The experimental results have also proved the existence of latent switching traps buildup process during annealing at an elevated temperature. This increase correlated with the decrease in fixed trap density. Physical and chemical processes responsible for the threshold voltage shift during irradiation have been analyzed on the basis of interactions between secondary electrons released by gamma photons with covalent bonds Sio - O and Sio - Sio. H-W model has been used for the explanation of processes leading to latent switching traps buildup at an elevated temperature and its passivation at late annealing times.

Sign in / Sign up

Export Citation Format

Share Document