Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

N. D. Akhavan; G. Jolley; G. A. Umana-Membreno; J. Antoszewski; L. Faraone

doi:10.1063/1.4894152

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

Journal of Applied Physics ◽

10.1063/1.4894152 ◽

2014 ◽

Vol 116 (8) ◽

pp. 084508 ◽

Cited By ~ 1

Author(s):

N. D. Akhavan ◽

G. Jolley ◽

G. A. Umana-Membreno ◽

J. Antoszewski ◽

L. Faraone

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Topological Insulator ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4770324 ◽

2012 ◽

Vol 112 (12) ◽

pp. 124511 ◽

Cited By ~ 20

Author(s):

Jiwon Chang ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Topological Insulator ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2097 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2097-2102

Author(s):

Yu-Sheng Wu ◽

Pin Su

Keyword(s):

Metal Oxide ◽

Analytical Solutions ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Poisson's Equation ◽

Random Dopant Fluctuation ◽

Random Dopant

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Fabrication of n-channel metal–oxide–semiconductor field-effect transistors with 0.2 μm gate lengths in 500 Å thin film silicon on sapphire

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585950 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2954

Author(s):

P. R. de la Houssaye

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

Journal of Applied Physics ◽

10.1063/1.1453510 ◽

2002 ◽

Vol 91 (6) ◽

pp. 3737-3740 ◽

Cited By ~ 21

Author(s):

W. J. Gross ◽

D. Vasileska ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Three Dimensional Simulations

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Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6290 ◽

1998 ◽

Vol 37 (Part 1, No. 12A) ◽

pp. 6290-6294

Author(s):

Yasuhiro Sato ◽

Toshihiko Kosugi ◽

Toshiaki Tsuchiya ◽

Hiromu Ishii

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Drain Region ◽

Ultra Thin Film

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Three-dimensional electronic structures in the Si inversion layer of nanoscale metal-oxide-semiconductor field-effect transistors

Solid State Communications ◽

10.1016/j.ssc.2005.10.027 ◽

2006 ◽

Vol 137 (1-2) ◽

pp. 26-29

Author(s):

J.H. Kim ◽

J.H. Jung ◽

T.W. Kim

Keyword(s):

Metal Oxide ◽

Electronic Structures ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effects Of Grain Boundaries On Channel Conduction In Thin Film Polysilicon On Silicon-Dioxide Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs)

10.1117/12.934956 ◽

1983 ◽

Cited By ~ 1

Author(s):

J. G. Fossum ◽

A. Ortiz ◽

H.-K Lim ◽

H.-W. Lam

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Silicon Dioxide ◽

Grain Boundaries ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.1699496 ◽

2004 ◽

Vol 95 (12) ◽

pp. 7954-7960 ◽

Cited By ~ 47

Author(s):

M. J. Gilbert ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Three Dimensional Modeling ◽

Dimensional Modeling

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A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3173179 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024504 ◽

Cited By ~ 5

Author(s):

Kiran Sharma ◽

D. P. Joshi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Electrical Conduction ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film

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