Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

H. Takamizawa; Y. Shimizu; K. Inoue; T. Toyama; N. Okada; M. Kato; H. Uchida; F. Yano; A. Nishida; T. Mogami; Y. Nagai

doi:10.1063/1.3644960

Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

Applied Physics Letters ◽

10.1063/1.3644960 ◽

2011 ◽

Vol 99 (13) ◽

pp. 133502 ◽

Cited By ~ 34

Author(s):

H. Takamizawa ◽

Y. Shimizu ◽

K. Inoue ◽

T. Toyama ◽

N. Okada ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2097 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2097-2102

Author(s):

Yu-Sheng Wu ◽

Pin Su

Keyword(s):

Metal Oxide ◽

Analytical Solutions ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Poisson's Equation ◽

Random Dopant Fluctuation ◽

Random Dopant

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Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

Journal of Applied Physics ◽

10.1063/1.1453510 ◽

2002 ◽

Vol 91 (6) ◽

pp. 3737-3740 ◽

Cited By ~ 21

Author(s):

W. J. Gross ◽

D. Vasileska ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Three Dimensional Simulations

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Three-dimensional electronic structures in the Si inversion layer of nanoscale metal-oxide-semiconductor field-effect transistors

Solid State Communications ◽

10.1016/j.ssc.2005.10.027 ◽

2006 ◽

Vol 137 (1-2) ◽

pp. 26-29

Author(s):

J.H. Kim ◽

J.H. Jung ◽

T.W. Kim

Keyword(s):

Metal Oxide ◽

Electronic Structures ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.1699496 ◽

2004 ◽

Vol 95 (12) ◽

pp. 7954-7960 ◽

Cited By ~ 47

Author(s):

M. J. Gilbert ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Three Dimensional Modeling ◽

Dimensional Modeling

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Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.1406980 ◽

2001 ◽

Vol 79 (14) ◽

pp. 2267-2269 ◽

Cited By ~ 27

Author(s):

Nobuyuki Sano ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Diffusion ◽

Random Dopant

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Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

Journal of Applied Physics ◽

10.1063/1.4894152 ◽

2014 ◽

Vol 116 (8) ◽

pp. 084508 ◽

Cited By ~ 1

Author(s):

N. D. Akhavan ◽

G. Jolley ◽

G. A. Umana-Membreno ◽

J. Antoszewski ◽

L. Faraone

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Topological Insulator ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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High Performance Three-Dimensional Double-Stacked Multiple-Nanochannel and Quadruple-Nanogate ZnO-Based Fin Metal-Oxide-Semiconductor Field-Effect Transistors

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0281712jss ◽

2017 ◽

Vol 6 (12) ◽

pp. Q157-Q160

Author(s):

Hsin-Ying Lee ◽

Li-Yi Jian ◽

Hung-Lin Huang ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3031303 ◽

2008 ◽

Vol 104 (11) ◽

pp. 114515 ◽

Cited By ~ 7

Author(s):

Keng-Ming Liu ◽

Wanqiang Chen ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Monte Carlo ◽

Metal Oxide ◽

Field Effect ◽

Schrodinger Equation ◽

Carrier Transport ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Three Dimensions ◽

Oxide Semiconductor

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Three-Dimensional Visualization Technique for Crystal Defects in High Performance p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Embedded SiGe Source/Drain

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da22 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA22 ◽

Cited By ~ 4

Author(s):

Shuichi Kudo ◽

Nobuto Nakanishi ◽

Yukinori Hirose ◽

Kazuhiko Sato ◽

Tomohiro Yamashita ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Crystal Defects ◽

Oxide Semiconductor ◽

Visualization Technique

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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