Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Nobuyuki Sano; Masaaki Tomizawa

doi:10.1063/1.1406980

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.1406980 ◽

2001 ◽

Vol 79 (14) ◽

pp. 2267-2269 ◽

Cited By ~ 27

Author(s):

Nobuyuki Sano ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Diffusion ◽

Random Dopant

Download Full-text

Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2097 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2097-2102

Author(s):

Yu-Sheng Wu ◽

Pin Su

Keyword(s):

Metal Oxide ◽

Analytical Solutions ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Poisson's Equation ◽

Random Dopant Fluctuation ◽

Random Dopant

Download Full-text

Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

Journal of Applied Physics ◽

10.1063/1.1453510 ◽

2002 ◽

Vol 91 (6) ◽

pp. 3737-3740 ◽

Cited By ~ 21

Author(s):

W. J. Gross ◽

D. Vasileska ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Three Dimensional Simulations

Download Full-text

Simulation of Ultrathin Body Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Based on Drift-Diffusion Model Incorporating an Effective Potential

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4987 ◽

2003 ◽

Vol 42 (Part 1, No. 8) ◽

pp. 4987-4991

Author(s):

Eiichi Sano

Keyword(s):

Metal Oxide ◽

Diffusion Model ◽

Effective Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Drift Diffusion Model ◽

Drift Diffusion

Download Full-text

Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide-Semiconductor-Field-Effect-Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2644 ◽

2019 ◽

Vol 14 (7) ◽

pp. 1037-1041

Author(s):

Wei-Feng Lü ◽

Liang Dai ◽

Guang-Yi Wang ◽

Mi Lin

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Dopant Fluctuation ◽

Gate Capacitance ◽

Random Dopant

Download Full-text

Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2283 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2283-L2285 ◽

Cited By ~ 4

Author(s):

Hans Kosina ◽

Siegfried Selberherr

Keyword(s):

Monte Carlo ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Diffusion Method ◽

Drift Diffusion

Download Full-text

Three-dimensional electronic structures in the Si inversion layer of nanoscale metal-oxide-semiconductor field-effect transistors

Solid State Communications ◽

10.1016/j.ssc.2005.10.027 ◽

2006 ◽

Vol 137 (1-2) ◽

pp. 26-29

Author(s):

J.H. Kim ◽

J.H. Jung ◽

T.W. Kim

Keyword(s):

Metal Oxide ◽

Electronic Structures ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.1699496 ◽

2004 ◽

Vol 95 (12) ◽

pp. 7954-7960 ◽

Cited By ~ 47

Author(s):

M. J. Gilbert ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Three Dimensional Modeling ◽

Dimensional Modeling

Download Full-text

Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.044502 ◽

2009 ◽

Vol 48 (4) ◽

pp. 044502 ◽

Cited By ~ 18

Author(s):

Arifin Tamsir Putra ◽

Akio Nishida ◽

Shiro Kamohara ◽

Takaaki Tsunomura ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Accurate Prediction ◽

Oxide Semiconductor ◽

Random Dopant Fluctuation ◽

Voltage Variation ◽

Random Dopant

Download Full-text

Two-dimensional drift-diffusion simulation of superficial strained-Si/Si[sub 1−x]Ge[sub x] channel metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589935 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1538

Author(s):

J. B. Roldán

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Drift Diffusion ◽

Strained Si ◽

Diffusion Simulation

Download Full-text

A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.6346 ◽

2003 ◽

Vol 42 (Part 1, No. 10) ◽

pp. 6346-6353 ◽

Cited By ~ 3

Author(s):

Eiichi Sano

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Diffusion ◽

Strained Si ◽

Theoretical Comparison

Download Full-text