Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N2/H2 and N2/NH3 plasmas

2002 ◽  
Vol 91 (5) ◽  
pp. 2615-2621 ◽  
Author(s):  
Hisao Nagai ◽  
Seigou Takashima ◽  
Mineo Hiramatsu ◽  
Masaru Hori ◽  
Toshio Goto
Keyword(s):  
Dielectric Constant ◽  
High Density ◽  
Low Dielectric Constant ◽  
Low Dielectric

High-Density Plasma Etching of Low Dielectric Constant Materials

1998 ◽  
Vol 511 ◽  
Author(s):  
T. E. F. M. Standaert ◽  
P. J. Matsuo ◽  
S. D. Allen ◽  
G. S. Oehrlein ◽  
T. J. Dalton ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Density ◽  
Low Dielectric Constant ◽  
Hydrogen Silsesquioxane ◽  
Copper Surfaces ◽  
Low Dielectric ◽  
Oxygen Contamination ◽  
Low Dielectric Constant Materials ◽  
Fluorocarbon Film ◽  
Density Plasma

ABSTRACTThe patterning of several novel low dielectric constant (K) materials has been studied in a high-density plasma (HDP) tool. Recent results obtained on oxide-like materials, such as fluorinated oxide, hydrogen silsesquioxane (HSQ), and methyl silsesquioxane (MSQ), are reviewed. These materials can be successfully patterned using a fluorocarbon etching chemistry. The etching is in this case controlled by a thin fluorocarbon film at the surface. The patterning of polymer dielectrics can be performed in an oxygen etching chemistry. As an example, the patterning of Parylene-N in an oxygen chemistry is discussed. In this case, the ion and the oxygen radical flux need to be properly controlled to obtain a directional etching process. After the dielectric etch, either in a fluorocarbon or oxygen based chemistry, fluorocarbons and oxygen contamination remain at the exposed metal surfaces. We recently demonstrated how a plasma treatment following the dielectric etch reduces these contaminants. The results of this treatment on copper surfaces and the resulting modification to the dielectric are reviewed.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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