High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)

2001 ◽  
Vol 19 (2) ◽  
pp. 435-446 ◽  
Author(s):  
T. E. F. M. Standaert ◽  
P. J. Matsuo ◽  
X. Li ◽  
G. S. Oehrlein ◽  
T.-M. Lu ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Density ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Density Plasma

High-Density Plasma Etching of Low Dielectric Constant Materials

1998 ◽  
Vol 511 ◽  
Author(s):  
T. E. F. M. Standaert ◽  
P. J. Matsuo ◽  
S. D. Allen ◽  
G. S. Oehrlein ◽  
T. J. Dalton ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Density ◽  
Low Dielectric Constant ◽  
Hydrogen Silsesquioxane ◽  
Copper Surfaces ◽  
Low Dielectric ◽  
Oxygen Contamination ◽  
Low Dielectric Constant Materials ◽  
Fluorocarbon Film ◽  
Density Plasma

ABSTRACTThe patterning of several novel low dielectric constant (K) materials has been studied in a high-density plasma (HDP) tool. Recent results obtained on oxide-like materials, such as fluorinated oxide, hydrogen silsesquioxane (HSQ), and methyl silsesquioxane (MSQ), are reviewed. These materials can be successfully patterned using a fluorocarbon etching chemistry. The etching is in this case controlled by a thin fluorocarbon film at the surface. The patterning of polymer dielectrics can be performed in an oxygen etching chemistry. As an example, the patterning of Parylene-N in an oxygen chemistry is discussed. In this case, the ion and the oxygen radical flux need to be properly controlled to obtain a directional etching process. After the dielectric etch, either in a fluorocarbon or oxygen based chemistry, fluorocarbons and oxygen contamination remain at the exposed metal surfaces. We recently demonstrated how a plasma treatment following the dielectric etch reduces these contaminants. The results of this treatment on copper surfaces and the resulting modification to the dielectric are reviewed.

Naphthalene-containing poly(arylene ether ketone) with low dielectric constant

2018 ◽  
Vol 135 (44) ◽  
pp. 46857 ◽  
Author(s):  
Yurong Zhang ◽  
Hao Jiang ◽  
Jie Liu ◽  
Chengji Zhao ◽  
Hui Na
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Ether Ketone

Design and Fabrication of a Low Dielectric Constant Poly(arylene ether sulfone) Film-Containing Cyclohexane Group

2020 ◽  
Vol 59 (20) ◽  
pp. 9541-9549
Author(s):  
Gang Zhang ◽  
Dongsheng Li ◽  
Guangming Yan ◽  
Han Wang ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether

Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications

1996 ◽  
Vol 443 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Kelly A. Heap ◽  
William F. Burgoyne ◽  
Lloyd M. Robeson
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Moisture Absorption ◽  
Dielectric Material ◽  
Mechanical Analysis ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Low Dielectric Constant Materials ◽  
Excellent Adhesion

AbstractPoly(arylene ethers)s are low dielectric constant organic spin on materials. PAE-2, which is a non-fluorinated poly(arylene ether), exhibits a dielectric constant below 3.0, thermal stability greater than 425 °C as well as excellent adhesion to Si, SiO2, and Al. These are the major atributes which makes it a very attractive candidate for integration as an interlevel or inter-metal dielectric material (ILD). Material properties including dielectric constant, thermal stability, moisture absorption, and mechanical analysis will be discussed.

Low dielectric constant silica-containing cross-linked organic-inorganic materials based on fluorinated poly(arylene ether)s

Polymer ◽  
2018 ◽  
Vol 157 ◽  
pp. 131-138 ◽  
Author(s):  
Ihor Tkachenko ◽  
Yuriy Kononevich ◽  
Yaroslav Kobzar ◽  
Olha Purikova ◽  
Yurii Yakovlev ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Inorganic Materials ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether

Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N2/H2 and N2/NH3 plasmas

2002 ◽  
Vol 91 (5) ◽  
pp. 2615-2621 ◽  
Author(s):  
Hisao Nagai ◽  
Seigou Takashima ◽  
Mineo Hiramatsu ◽  
Masaru Hori ◽  
Toshio Goto
Keyword(s):  
Dielectric Constant ◽  
High Density ◽  
Low Dielectric Constant ◽  
Low Dielectric
Sign in / Sign up

Export Citation Format

Share Document