Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2

1999 ◽  
Vol 17 (3) ◽  
pp. 741-748 ◽  
Author(s):  
T. E. F. M. Standaert ◽  
P. J. Matsuo ◽  
S. D. Allen ◽  
G. S. Oehrlein ◽  
T. J. Dalton
Keyword(s):  
Dielectric Constant ◽  
High Density ◽  
Low Dielectric Constant ◽  
Fluorocarbon Plasmas ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

High-Density Plasma Etching of Low Dielectric Constant Materials

1998 ◽  
Vol 511 ◽  
Author(s):  
T. E. F. M. Standaert ◽  
P. J. Matsuo ◽  
S. D. Allen ◽  
G. S. Oehrlein ◽  
T. J. Dalton ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Density ◽  
Low Dielectric Constant ◽  
Hydrogen Silsesquioxane ◽  
Copper Surfaces ◽  
Low Dielectric ◽  
Oxygen Contamination ◽  
Low Dielectric Constant Materials ◽  
Fluorocarbon Film ◽  
Density Plasma

ABSTRACTThe patterning of several novel low dielectric constant (K) materials has been studied in a high-density plasma (HDP) tool. Recent results obtained on oxide-like materials, such as fluorinated oxide, hydrogen silsesquioxane (HSQ), and methyl silsesquioxane (MSQ), are reviewed. These materials can be successfully patterned using a fluorocarbon etching chemistry. The etching is in this case controlled by a thin fluorocarbon film at the surface. The patterning of polymer dielectrics can be performed in an oxygen etching chemistry. As an example, the patterning of Parylene-N in an oxygen chemistry is discussed. In this case, the ion and the oxygen radical flux need to be properly controlled to obtain a directional etching process. After the dielectric etch, either in a fluorocarbon or oxygen based chemistry, fluorocarbons and oxygen contamination remain at the exposed metal surfaces. We recently demonstrated how a plasma treatment following the dielectric etch reduces these contaminants. The results of this treatment on copper surfaces and the resulting modification to the dielectric are reviewed.

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

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