Photoluminescence Detection of Shallow Impurity Neutralization in Iii-V Compound Semiconductors

1987 ◽  
Vol 104 ◽  
Author(s):  
Jörg Weber ◽  
Mandeep Singh
Keyword(s):  
Plasma Treatment ◽  
Atomic Hydrogen ◽  
Hydrogen Plasma ◽  
Compound Semiconductors ◽  
Exciton Luminescence ◽  
Before And After ◽  
Intensity Changes ◽  
Shallow Impurity ◽  
Intense Luminescence ◽  
Sulfur Donor

ABSTRACTWe studied the low-temperature photoluminescence (PL) of several III–V compound semiconductors before and after hydrogen-plasma treatment. Drastic intensity changes of the bound exciton luminescence after hydrogen plasma treatments indicate a neutralization of impurities by the atomic hydrogen. In GaP, neutralization of the sulfur donor as well as the acceptors (C, Zn, Cd) is observed. The intense luminescence of the exciton bound to isoelectronic N in GaP is fully quenched by hydrogen plasma treatment.

scholarly journals Hydrogen Plasma Treatment of Aligned Multi-Walled Carbon Nanotube Arrays for Improvement of Field Emission Properties

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4420
Author(s):  
Dmitriy V. Gorodetskiy ◽  
Artem V. Gusel’nikov ◽  
Alexander G. Kurenya ◽  
Dmitry A. Smirnov ◽  
Lyubov G. Bulusheva ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Plasma Treatment ◽  
Low Voltage ◽  
Hydrogen Plasma ◽  
Etching Rate ◽  
Chemical Vapor ◽  
Field Emission Properties ◽  
Before And After ◽  
Cnt Arrays ◽  
Emission Threshold

Vertically aligned carbon nanotube (CNT) arrays show potential for the development of planar low-voltage emission cathodes. The characteristics of cathodes can be improved by modifying their surface, e.g., by hydrogen plasma treatment, as was performed in this work. The surface of multi-walled CNT arrays grown on silicon substrates from toluene and ferrocene using catalytic chemical vapor deposition was treated in a high-pressure (~104 Pa) microwave reactor. The structure, composition, and current-voltage characteristics of the arrays were studied before and after hydrogen plasma treatment at various power values and durations. CNT tips were destroyed and catalytic iron was released from the CNT channels. The etching rate was influenced by iron particles that formed on the array surface. The lower emission threshold in the plasma-treated arrays than in the initial sample is explained by the amplification factor of the local electric field increasing due to graphene structures of unfolded nanotube layers that formed at the CNT tips.

The Study of SiC Surface Cleaning by Hydrogen Plasma

2013 ◽  
Vol 473 ◽  
pp. 61-64
Author(s):  
Su Hua Chen
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Treatment Time ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Plasma System ◽  
Xps Spectra ◽  
X Ray ◽  
Surface Oxides ◽  
Before And After

The SiC surfaces were cleaned by the hydrogen plasma with ECRPEMOCVD plasma system at low temperature of 200°C, after the traditional wet cleaning. The surfaces were investigated by RHEED and X-ray Photoelectron Spectroscopy before and after hydrogen plasma treatment. The RHEED imagines showed that the SiC surfaces by hydrogen plasma treatment were more flatter than the SiC surfaces by the traditional wet cleaning, and we found the result that more treatment time, more flatter. The XPS spectra examinations indicated that the surface oxides reduced obviously and the C/C-H compounds on the SiC surface were removed by hydrogen plasma treatment, so the antioxidant ability of the SiC surface was improved.

Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
High Efficiency ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
High Efficiency Solar Cells ◽  
Wide Gap

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Surface Modification of Si Field Emitter Arrays for Vacuum Sealing

2000 ◽  
Vol 621 ◽  
Author(s):  
M. Nagao ◽  
H. Tanabe ◽  
T. Kobayashi ◽  
T. Matsukawa ◽  
S. Kanemaru ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Vacuum Packaging ◽  
Field Emitter ◽  
Vacuum Sealing ◽  
Field Emitter Arrays ◽  
Vacuum Microelectronics ◽  
Field Emission Displays ◽  
Before And After ◽  
Heating Treatment ◽  
Field Emitter Array

ABSTRACTVacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.

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