Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Hisao Kawaura; Toshitsugu Sakamoto; Toshio Baba

doi:10.1063/1.126789

Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Cited By ~ 62

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

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Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1527710 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1064-1068 ◽

Cited By ~ 13

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2348 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2348-2352 ◽

Cited By ~ 62

Author(s):

Shin-ichi Takagi ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling Current

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Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

Applied Physics Letters ◽

10.1063/1.2245373 ◽

2006 ◽

Vol 89 (7) ◽

pp. 073509 ◽

Cited By ~ 31

Author(s):

Ji-Song Lim ◽

Xiaodong Yang ◽

Toshikazu Nishida ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deformation Potential ◽

Direct Tunneling Current ◽

Band Deformation

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Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1852731 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032104 ◽

Cited By ~ 2

Author(s):

Shahram Ghanad Tavakoli ◽

Sungkweon Baek ◽

Hyo Sik Chang ◽

Dae Won Moon ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Solid Phase ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Ion Implanted

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Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary

Journal of Applied Physics ◽

10.1063/1.2202196 ◽

2006 ◽

Vol 99 (10) ◽

pp. 104501 ◽

Cited By ~ 6

Author(s):

E. Nadimi ◽

C. Radehaus ◽

E. P. Nakhmedov ◽

K. Wieczorek

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Open Boundary ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Metal Oxide Semiconductor Structure

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An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.424 ◽

2000 ◽

Vol 39 (Part 1, No. 2A) ◽

pp. 424-431 ◽

Cited By ~ 1

Author(s):

Hiroshi Nakatsuji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Dioxide Film ◽

Direct Tunneling ◽

Semiconductor System ◽

Direct Tunneling Current ◽

Dioxide Film

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Fabrication of 30 nm gate length electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors using a calixarene resist

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589732 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2806 ◽

Cited By ~ 6

Author(s):

T. Sakamoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Shallow Junction

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Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1379786 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4034-4036 ◽

Cited By ~ 13

Author(s):

Y. T. Hou ◽

M. F. Li ◽

W. H. Lai ◽

Y. Jin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Hole Current

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Fabrication of 12 nm electrically variable shallow junction metal–oxide–semiconductor field effect transistors on silicon on insulator substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1621670 ◽

2003 ◽

Vol 21 (6) ◽

pp. 2975 ◽

Cited By ~ 5

Author(s):

W. Henschel ◽

T. Wahlbrink ◽

Y. M. Georgiev ◽

M. Lemme ◽

T. Mollenhauer ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Shallow Junction

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Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Cited By ~ 6

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

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