Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary

E. Nadimi; C. Radehaus; E. P. Nakhmedov; K. Wieczorek

doi:10.1063/1.2202196

Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary

Journal of Applied Physics ◽

10.1063/1.2202196 ◽

2006 ◽

Vol 99 (10) ◽

pp. 104501 ◽

Cited By ~ 6

Author(s):

E. Nadimi ◽

C. Radehaus ◽

E. P. Nakhmedov ◽

K. Wieczorek

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Open Boundary ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Metal Oxide Semiconductor Structure

Download Full-text

An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.424 ◽

2000 ◽

Vol 39 (Part 1, No. 2A) ◽

pp. 424-431 ◽

Cited By ~ 1

Author(s):

Hiroshi Nakatsuji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Dioxide Film ◽

Direct Tunneling ◽

Semiconductor System ◽

Direct Tunneling Current ◽

Dioxide Film

Download Full-text

Temperature-Dependent Tunneling Current in NiSi2 Nanocrystals Embedded in Metal-Oxide-Semiconductor Structure

Integrated Ferroelectrics ◽

10.1080/10584587.2013.795834 ◽

2013 ◽

Vol 143 (1) ◽

pp. 24-31

Author(s):

Jenn-Kai Tsai ◽

Bin-Hong Yeh ◽

Teen-Hang Meen ◽

Tian-Chiuan Wu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Temperature Dependent ◽

Metal Oxide Semiconductor Structure

Download Full-text

Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Cited By ~ 6

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

Download Full-text

Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Cited By ~ 62

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Theory of direct tunneling current in metal–oxide–semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1427398 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1400-1409 ◽

Cited By ~ 49

Author(s):

R. Clerc ◽

A. Spinelli ◽

G. Ghibaudo ◽

G. Pananakakis

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1527710 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1064-1068 ◽

Cited By ~ 13

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Applied Physics Letters ◽

10.1063/1.1403658 ◽

2001 ◽

Vol 79 (12) ◽

pp. 1831-1833 ◽

Cited By ~ 9

Author(s):

Jing Wang ◽

Yutao Ma ◽

Lilin Tian ◽

Zhijian Li

Keyword(s):

Metal Oxide ◽

Function Method ◽

Airy Function ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal–Oxide–Semiconductor Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.3364 ◽

2003 ◽

Vol 42 (Part 1, No. 6A) ◽

pp. 3364-3367 ◽

Cited By ~ 1

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Consistent Calculation ◽

Direct Tunneling ◽

Self Consistent ◽

Direct Tunneling Current

Download Full-text

Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Applied Physics Letters ◽

10.1063/1.123060 ◽

1999 ◽

Vol 74 (3) ◽

pp. 457-459 ◽

Cited By ~ 183

Author(s):

Leonard F. Register ◽

Elyse Rosenbaum ◽

Kevin Yang

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Model ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation

AIP Advances ◽

10.1063/5.0048080 ◽

2021 ◽

Vol 11 (6) ◽

pp. 065304

Author(s):

Man Ding ◽

Xin Liu

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Gamma Ray ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Damage Effect ◽

Gamma Ray Irradiation ◽

Metal Oxide Semiconductor Structure

Download Full-text