Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

Shahram Ghanad Tavakoli; Sungkweon Baek; Hyo Sik Chang; Dae Won Moon; Hyunsang Hwang

doi:10.1063/1.1852731

Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1852731 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032104 ◽

Cited By ~ 2

Author(s):

Shahram Ghanad Tavakoli ◽

Sungkweon Baek ◽

Hyo Sik Chang ◽

Dae Won Moon ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Solid Phase ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Ion Implanted

Download Full-text

Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bf05 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BF05 ◽

Cited By ~ 15

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Takahiro Nagano ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Ion Implanted

Download Full-text

Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097106 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097106

Author(s):

Wang Shou-Guo ◽

Zhang Yi-Men ◽

Zhang Yu-Ming

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Parameter Analysis ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Ion Implanted

Download Full-text

Fabrication of 30 nm gate length electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors using a calixarene resist

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589732 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2806 ◽

Cited By ~ 6

Author(s):

T. Sakamoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Shallow Junction

Download Full-text

Fabrication of 12 nm electrically variable shallow junction metal–oxide–semiconductor field effect transistors on silicon on insulator substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1621670 ◽

2003 ◽

Vol 21 (6) ◽

pp. 2975 ◽

Cited By ~ 5

Author(s):

W. Henschel ◽

T. Wahlbrink ◽

Y. M. Georgiev ◽

M. Lemme ◽

T. Mollenhauer ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Shallow Junction

Download Full-text

Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Cited By ~ 62

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bf05 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BF05

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Takahiro Nagano ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Ion Implanted

Download Full-text

Electron holography analysis of a shallow junction for planar-bulk metal-oxide-semiconductor field-effect transistors approaching the scaling limit

Journal of Applied Physics ◽

10.1063/1.2937246 ◽

2008 ◽

Vol 103 (11) ◽

pp. 114514 ◽

Cited By ~ 10

Author(s):

Nobuyuki Ikarashi ◽

Takeshi Ikezawa ◽

Kazuya Uejima ◽

Toshinori Fukai ◽

Makoto Miyamura ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Scaling Limit ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Holography ◽

Bulk Metal ◽

Shallow Junction

Download Full-text

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Download Full-text

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

Download Full-text

Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

Download Full-text