Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Kingsuk Maitra; Navakanta Bhat

doi:10.1063/1.1527710

Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1527710 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1064-1068 ◽

Cited By ~ 13

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Cited By ~ 62

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

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Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2348 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2348-2352 ◽

Cited By ~ 62

Author(s):

Shin-ichi Takagi ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling Current

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Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

Applied Physics Letters ◽

10.1063/1.2245373 ◽

2006 ◽

Vol 89 (7) ◽

pp. 073509 ◽

Cited By ~ 31

Author(s):

Ji-Song Lim ◽

Xiaodong Yang ◽

Toshikazu Nishida ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deformation Potential ◽

Direct Tunneling Current ◽

Band Deformation

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Reduction of Radiation-Induced Degradation in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal $\bf N_{2}O$ Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l916 ◽

1994 ◽

Vol 33 (Part 2, No. 7A) ◽

pp. L916-L917 ◽

Cited By ~ 1

Author(s):

You-Lin Wu ◽

Kang-Min Kuo ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Radiation Induced

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Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary

Journal of Applied Physics ◽

10.1063/1.2202196 ◽

2006 ◽

Vol 99 (10) ◽

pp. 104501 ◽

Cited By ~ 6

Author(s):

E. Nadimi ◽

C. Radehaus ◽

E. P. Nakhmedov ◽

K. Wieczorek

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Open Boundary ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Metal Oxide Semiconductor Structure

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An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.424 ◽

2000 ◽

Vol 39 (Part 1, No. 2A) ◽

pp. 424-431 ◽

Cited By ~ 1

Author(s):

Hiroshi Nakatsuji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Dioxide Film ◽

Direct Tunneling ◽

Semiconductor System ◽

Direct Tunneling Current ◽

Dioxide Film

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Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1379786 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4034-4036 ◽

Cited By ~ 13

Author(s):

Y. T. Hou ◽

M. F. Li ◽

W. H. Lai ◽

Y. Jin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Hole Current

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Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.4225 ◽

1997 ◽

Vol 36 (Part 1, No. 7A) ◽

pp. 4225-4229

Author(s):

Jinho Ahn ◽

Dim-Lee Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Gate Oxides ◽

Chemical Vapor Deposited

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Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Cited By ~ 6

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

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Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4996365 ◽

2017 ◽

Vol 111 (4) ◽

pp. 042104 ◽

Cited By ~ 8

Author(s):

M. Cabello ◽

V. Soler ◽

J. Montserrat ◽

J. Rebollo ◽

J. M. Rafí ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Boron Diffusion ◽

Gate Oxides

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