Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors

Y. T. Hou; M. F. Li; W. H. Lai; Y. Jin

doi:10.1063/1.1379786

Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1379786 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4034-4036 ◽

Cited By ~ 13

Author(s):

Y. T. Hou ◽

M. F. Li ◽

W. H. Lai ◽

Y. Jin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Hole Current

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The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939260 ◽

2002 ◽

Author(s):

Jing-Chi Yu ◽

B.C. Lai ◽

J.Y. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

IEEE Electron Device Letters ◽

10.1109/55.877203 ◽

2000 ◽

Vol 21 (11) ◽

pp. 537-539 ◽

Cited By ~ 20

Author(s):

Jing-Chi Yu ◽

B.C. Lai ◽

J.Y.-M. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Cited By ~ 1

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Cited By ~ 1

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Cited By ~ 4

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Secondary Ion

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High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Cited By ~ 4

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

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Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3130016 ◽

2021 ◽

pp. 1-7

Author(s):

Zhihao Chen ◽

Xinxin Yu ◽

Jianjun Zhou ◽

Shuman Mao ◽

Yuechan Kong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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AlGaN/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Al2O3 Gate-Oxide and Step-Graded AlGaN Channel

ECS Meeting Abstracts ◽

10.1149/ma2021-01331086mtgabs ◽

2021 ◽

Vol MA2021-01 (33) ◽

pp. 1086-1086

Author(s):

Ching-Sung Lee ◽

Yun-Jung Lin ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

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Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Applied Physics Letters ◽

10.1063/1.3148830 ◽

2009 ◽

Vol 94 (22) ◽

pp. 223512 ◽

Cited By ~ 59

Author(s):

P. Kordoš ◽

R. Stoklas ◽

D. Gregušová ◽

J. Novák

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Dependent

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