Electrical characteristics of ultrathin gate oxide prepared by postoxidation annealing in ND3

2000 ◽  
Vol 76 (6) ◽  
pp. 772-773 ◽  
Author(s):  
Hyungshin Kwon ◽  
Hyunsang Hwang
Keyword(s):  
Gate Oxide ◽  
Electrical Characteristics

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

1997 ◽  
Vol 471 ◽  
Author(s):  
C. M. Park ◽  
J.-H. Jeon ◽  
J.-S. Yoo ◽  
M.-K. Han
Keyword(s):  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
New Device ◽  
Hydrogen Radicals ◽  
Long Channel ◽  
Conventional Device

ABSTARCT:We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

2017 ◽  
Vol 64 (3) ◽  
pp. 960-968 ◽  
Author(s):  
Sanjay Kumar ◽  
Ekta Goel ◽  
Kunal Singh ◽  
Balraj Singh ◽  
Prince Kumar Singh ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Gate Oxide ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Oxide Structure ◽  
Dual Material

SC1 Cleaning Effect on Electrical Characteristics of 256 Mbit Mobile DRAM with Dual Gate Oxide

2004 ◽  
Vol 151 (10) ◽  
pp. G683 ◽  
Author(s):  
Chihoon Lee ◽  
Namhyuk Jo ◽  
Chanseong Hwang ◽  
Hyeong Joon Kim ◽  
Wonshik Lee
Keyword(s):  
Gate Oxide ◽  
Electrical Characteristics ◽  
Dual Gate

A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS

2014 ◽  
Vol 696 ◽  
pp. 57-61
Author(s):  
Ling Sun ◽  
Yu Wei Zhou ◽  
Hong Wang ◽  
Xiang Dong Luo ◽  
Jia Yuan Guo
Keyword(s):  
Gate Oxide ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Oxide Breakdown ◽  
Simulation Based ◽  
Fundamental Understanding ◽  
Thin Gate Oxide ◽  
The Relationship

The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.

The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films

2000 ◽  
Author(s):  
Yoshihide Wakayama ◽  
Takeshi Ohkawa ◽  
Osamu Nakamura ◽  
Sadao Kobayashi ◽  
Shigetoshi Sugawa ◽  
...  
Keyword(s):  
Organic Compounds ◽  
Oxide Films ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Thin Gate Oxide
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