A Simulation Based Study for Electrical Characteristics of SOI TFETs With Ferroelectric Stacked Gate Oxide Structure

2017 ◽  
Author(s):  
Sanjay Kumar ◽  
Ashvini Rahangdale ◽  
Sweta Chander ◽  
Prince Kumar Singh ◽  
Kamalaksha Baral ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Electrical Characteristics ◽  
Oxide Structure ◽  
Simulation Based

2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

2017 ◽  
Vol 64 (3) ◽  
pp. 960-968 ◽  
Author(s):  
Sanjay Kumar ◽  
Ekta Goel ◽  
Kunal Singh ◽  
Balraj Singh ◽  
Prince Kumar Singh ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Gate Oxide ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Oxide Structure ◽  
Dual Material

A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS

2014 ◽  
Vol 696 ◽  
pp. 57-61
Author(s):  
Ling Sun ◽  
Yu Wei Zhou ◽  
Hong Wang ◽  
Xiang Dong Luo ◽  
Jia Yuan Guo
Keyword(s):  
Gate Oxide ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Oxide Breakdown ◽  
Simulation Based ◽  
Fundamental Understanding ◽  
Thin Gate Oxide ◽  
The Relationship

The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.

CPI Stress Induced Carrier Mobility Shift in Advanced Silicon Nodes

2016 ◽  
Author(s):  
Valeriy Sukharev ◽  
Jun-Ho Choy ◽  
Armen Kteyan ◽  
Henrik Hovsepyan ◽  
Uwe Muehle ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Compact Modeling ◽  
Electrical Characteristics ◽  
Mobility Shift ◽  
Physical Strain ◽  
Multi Scale ◽  
Modeling Methodology ◽  
Simulation Based Design ◽  
Simulation Based ◽  
Final Design

Potential challenges with managing mechanical stress and the consequent effects on device performance for advanced 3D IC technologies are outlined. The growing need for a simulation-based design verification flow capable of analyzing and detecting across-die out-of-spec stress-induced variations in MOSFET/FinFET electrical characteristics is highlighted. A physics-based compact modeling methodology for multi-scale simulation of all contributing components of stress induced variability is described. A simulation flow that provides an interface between layout formats (GDS II, OASIS), and FEA-based package-scale tools, is also developed. This tool, can be used to optimize the floorplan for different circuits and packaging technologies, and/or for the final design signoff, for all stress induced phenomena. Finally, a calibration technique based on fitting to measured electrical characterization data is presented, along with correlation of the electrical characteristics to direct physical strain measurements.

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

1997 ◽  
Vol 471 ◽  
Author(s):  
C. M. Park ◽  
J.-H. Jeon ◽  
J.-S. Yoo ◽  
M.-K. Han
Keyword(s):  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
New Device ◽  
Hydrogen Radicals ◽  
Long Channel ◽  
Conventional Device

ABSTARCT:We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

The effect of trench-gate-oxide structure on EPROM device operation

1988 ◽  
Vol 9 (6) ◽  
pp. 284-286 ◽  
Author(s):  
S.S.D. Chu ◽  
A.J. Steckl
Keyword(s):  
Gate Oxide ◽  
Oxide Structure ◽  
Device Operation
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