Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth

1999 ◽  
Vol 75 (26) ◽  
pp. 4049-4051 ◽  
Author(s):  
X. Li ◽  
P. W. Bohn ◽  
J. J. Coleman
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Yellow Band ◽  
Impurity States ◽  
Band Emission ◽  
Lateral Overgrowth ◽  
Yellow Band Emission

Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Ueklsa ◽  
T. Goto ◽  
Mv. Kumagai
Keyword(s):  
Single Crystal ◽  
Sapphire Substrate ◽  
Annealing Temperature ◽  
Yellow Band ◽  
Oxygen Ions ◽  
Band Emission ◽  
Pl Intensity ◽  
Effect Of Oxygen ◽  
Optimum Annealing Temperature ◽  
Yellow Band Emission

AbstractIn order to investigate the luminescence properties of Er3+in GaN and the effect of oxygen (O) on Er3+ -related emission in GaN:Er, erbium (Er) ions were implanted into single-crystal h-GaN grown on a c-axis sapphire substrate at an energy of 2MeV. Oxygen ions were subsequently coiniplanted into GaN with Er ions. The influence of oxygen on Er-related emission in GaN with a large yellow band was studied by comparing photoluminescence (PL) measurements of GaN:Er and GaN:ErO. It was found that the optimum annealing temperature to obtain maximum PL intensity was 1200°C and that the E3+a-related PL intensities from GaN:ErO samples were negligibly enhanced in comparison with the GaN:Er samples. The temperature dependence of PL intensity in GaN:ErO showed no appreciable difference from that of GaN:Er. But good correlation between Er-related and a large yellow band emission was observed in GaN. This indicates that codoped oxygen ions influence Er-related and yellow band emission in GaN

On the yellow-band emission in CdS films

2001 ◽  
Vol 73 (1) ◽  
pp. 61-65 ◽  
Author(s):  
R. Lozada-Morales ◽  
O. Zelaya-Angel ◽  
G. Torres-Delgado
Keyword(s):  
Yellow Band ◽  
Band Emission ◽  
Cds Films ◽  
Yellow Band Emission

Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays

2014 ◽  
Vol 6 (16) ◽  
pp. 14159-14166 ◽  
Author(s):  
Baodan Liu ◽  
Fang Yuan ◽  
Benjamin Dierre ◽  
Takashi Sekiguchi ◽  
Song Zhang ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Yellow Band ◽  
Band Emission ◽  
Gan Nanowire ◽  
Yellow Band Emission

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

2021 ◽  
Vol 118 (1) ◽  
pp. 012105
Author(s):  
Wenxin Tang ◽  
Fu Chen ◽  
Li zhang ◽  
Kun Xu ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Donor Type

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth

CrystEngComm ◽  
2012 ◽  
Vol 14 (17) ◽  
pp. 5558 ◽  
Author(s):  
Bo-Ra Yeom ◽  
R. Navamathavan ◽  
Ji-Hyeon Park ◽  
Yong-Ho Ra ◽  
Cheul-Ro Lee
Keyword(s):  
Growth Behavior ◽  
Epitaxial Lateral Overgrowth ◽  
Gan Nanowires ◽  
Lateral Overgrowth
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