Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays

2014 ◽  
Vol 6 (16) ◽  
pp. 14159-14166 ◽  
Author(s):  
Baodan Liu ◽  
Fang Yuan ◽  
Benjamin Dierre ◽  
Takashi Sekiguchi ◽  
Song Zhang ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Yellow Band ◽  
Band Emission ◽  
Gan Nanowire ◽  
Yellow Band Emission

Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Ueklsa ◽  
T. Goto ◽  
Mv. Kumagai
Keyword(s):  
Single Crystal ◽  
Sapphire Substrate ◽  
Annealing Temperature ◽  
Yellow Band ◽  
Oxygen Ions ◽  
Band Emission ◽  
Pl Intensity ◽  
Effect Of Oxygen ◽  
Optimum Annealing Temperature ◽  
Yellow Band Emission

AbstractIn order to investigate the luminescence properties of Er3+in GaN and the effect of oxygen (O) on Er3+ -related emission in GaN:Er, erbium (Er) ions were implanted into single-crystal h-GaN grown on a c-axis sapphire substrate at an energy of 2MeV. Oxygen ions were subsequently coiniplanted into GaN with Er ions. The influence of oxygen on Er-related emission in GaN with a large yellow band was studied by comparing photoluminescence (PL) measurements of GaN:Er and GaN:ErO. It was found that the optimum annealing temperature to obtain maximum PL intensity was 1200°C and that the E3+a-related PL intensities from GaN:ErO samples were negligibly enhanced in comparison with the GaN:Er samples. The temperature dependence of PL intensity in GaN:ErO showed no appreciable difference from that of GaN:Er. But good correlation between Er-related and a large yellow band emission was observed in GaN. This indicates that codoped oxygen ions influence Er-related and yellow band emission in GaN

On the yellow-band emission in CdS films

2001 ◽  
Vol 73 (1) ◽  
pp. 61-65 ◽  
Author(s):  
R. Lozada-Morales ◽  
O. Zelaya-Angel ◽  
G. Torres-Delgado
Keyword(s):  
Yellow Band ◽  
Band Emission ◽  
Cds Films ◽  
Yellow Band Emission

GaOx@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity

2021 ◽  
Vol 13 (35) ◽  
pp. 41916-41925
Author(s):  
Yu-Hang Ji ◽  
Qin Gao ◽  
An-Ping Huang ◽  
Meng-Qi Yang ◽  
Yan-Qi Liu ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Persistent Photoconductivity ◽  
Gan Nanowire ◽  
Flexible Graphite

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Oriented Bicrystalline GaN Nanowire Arrays suitable for Field Emission Applications

2007 ◽  
Vol 13 (10) ◽  
pp. 527-532 ◽  
Author(s):  
Z. Chen ◽  
C. B. Cao ◽  
H. S. Zhu
Keyword(s):  
Field Emission ◽  
Nanowire Arrays ◽  
Gan Nanowire

Comparison of top-down approaches for the fabrication of highly ordered GaN nanowire arrays

2021 ◽  
Author(s):  
Miriam Oliva ◽  
Abbes Tahraoui ◽  
Thomas Auzelle ◽  
Jonas Lähnemann ◽  
Lutz Geelhaar ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Top Down ◽  
Gan Nanowire
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