Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Ueklsa ◽  
T. Goto ◽  
Mv. Kumagai
Keyword(s):  
Single Crystal ◽  
Sapphire Substrate ◽  
Annealing Temperature ◽  
Yellow Band ◽  
Oxygen Ions ◽  
Band Emission ◽  
Pl Intensity ◽  
Effect Of Oxygen ◽  
Optimum Annealing Temperature ◽  
Yellow Band Emission

AbstractIn order to investigate the luminescence properties of Er3+in GaN and the effect of oxygen (O) on Er3+ -related emission in GaN:Er, erbium (Er) ions were implanted into single-crystal h-GaN grown on a c-axis sapphire substrate at an energy of 2MeV. Oxygen ions were subsequently coiniplanted into GaN with Er ions. The influence of oxygen on Er-related emission in GaN with a large yellow band was studied by comparing photoluminescence (PL) measurements of GaN:Er and GaN:ErO. It was found that the optimum annealing temperature to obtain maximum PL intensity was 1200°C and that the E3+a-related PL intensities from GaN:ErO samples were negligibly enhanced in comparison with the GaN:Er samples. The temperature dependence of PL intensity in GaN:ErO showed no appreciable difference from that of GaN:Er. But good correlation between Er-related and a large yellow band emission was observed in GaN. This indicates that codoped oxygen ions influence Er-related and yellow band emission in GaN

On the yellow-band emission in CdS films

2001 ◽  
Vol 73 (1) ◽  
pp. 61-65 ◽  
Author(s):  
R. Lozada-Morales ◽  
O. Zelaya-Angel ◽  
G. Torres-Delgado
Keyword(s):  
Yellow Band ◽  
Band Emission ◽  
Cds Films ◽  
Yellow Band Emission

Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays

2014 ◽  
Vol 6 (16) ◽  
pp. 14159-14166 ◽  
Author(s):  
Baodan Liu ◽  
Fang Yuan ◽  
Benjamin Dierre ◽  
Takashi Sekiguchi ◽  
Song Zhang ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Yellow Band ◽  
Band Emission ◽  
Gan Nanowire ◽  
Yellow Band Emission

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

Resistivity of single crystal C60 and effect of oxygen

1992 ◽  
Vol 84 (8) ◽  
pp. 827-829 ◽  
Author(s):  
Takeshi Arai ◽  
Youichi Murakami ◽  
Hiroyoshi Suematsu ◽  
Koichi Kikuchi ◽  
Yohji Achiba ◽  
...  
Keyword(s):  
Single Crystal ◽  
Effect Of Oxygen

Erbium-Silicided Source/Drain Junction Formation by Rapid Thermal Annealing Technique for Decananometer-Scale Schottky Barrier Metal-Oxide-Semiconductor Field- Effect Transistors

2004 ◽  
Vol 810 ◽  
Author(s):  
Moongyu Jang ◽  
Yarkyeon Kim ◽  
Jaeheon Shin ◽  
Kyoungwan Park ◽  
Seongjae Lee
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
Silicide Growth ◽  
Stable Growth ◽  
Optimum Annealing Temperature

ABSTRACTThe stable growth conditions of erbium-silicide on silicon-on-insulator (SOI) are investigated considering annealing temperature, SOI and sputtered erbium thickness. From the sheet resistance measurement, X-ray diffraction and Auger electron spectroscopy analysis, the optimum annealing temperature is determined as 500°C. Also, for the stable growth of erbium- silicide on SOI, the sputtered erbium thickness should be less than 1.5 times of SOI thickness. As the SOI thickness decreases below this critical thickness, erbium-rich region is formed at the erbium-silicide and buried-oxide interface. By applying the optimized erbium-silicide growth conditions, 50-nm-gate-length n-type SB-MOSFET is manufactured, which shows the possible usage of erbium-silicide as the source and drain material in the n-type Schottky barrier MOSFETs for decananometer regime applications.

scholarly journals Effect of Thermomechanical Cycling on Martensitic Transformation and Shape Memory Effect in 304 Austenitic Steel

Metals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 901
Author(s):  
Jie Chen ◽  
Yonghao Zhang ◽  
Jiqiang Ge ◽  
Huabei Peng ◽  
Shuke Huang ◽  
...  
Keyword(s):  
Martensitic Transformation ◽  
Shape Memory ◽  
Austenitic Steel ◽  
Shape Memory Effect ◽  
Memory Effect ◽  
Annealing Temperature ◽  
Cycle Number ◽  
Thermomechanical Cycling ◽  
Ε Martensite ◽  
Optimum Annealing Temperature

To improve the shape memory effect (SME) of 304 austenitic steel effectively and efficiently, thermomechanical cycling, comprising deformation at room temperature and annealing, was applied. The influences of cycle number and annealing temperature on the SME and microstructures in 304 austenitic steel were investigated by light microscope (LM), X-ray diffraction (XRD), and transmission electron microscope (TEM). The shape recovery ratio was remarkably improved from 16% to 40% after two thermomechanical cycles. The optimum annealing temperature was 833 K in the process of thermomechanical cycling. The improved SME by thermomechanical cycling was mainly related to stress-induced ε martensite rather than stress-induced α’ martensite. The reason is that thermomechanical cycling can not only promote the occurrence of the stress-induced γ→ε martensitic transformation, but also suppress the subsequently stress-induced ε→α′ transformation.

scholarly journals Behavior of W and WSix Contact Metallization on n- and p- Type GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 684-690
Author(s):  
X. A. Cao ◽  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Ohmic Behavior ◽  
Contact Metallization ◽  
Specific Contact ◽  
Heavily Doped ◽  
Sputter Deposited ◽  
Optimum Annealing Temperature ◽  
P Type

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

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