Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density

2009 ◽  
Vol 94 (25) ◽  
pp. 251912 ◽  
Author(s):  
Shih-Chun Ling ◽  
Chu-Li Chao ◽  
Jun-Rong Chen ◽  
Po-Chun Liu ◽  
Tsung-Shine Ko ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Miyake ◽  
H. Mizutani ◽  
K. Hiramatsu ◽  
Y. Iyechika ◽  
Y. Honda ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Window Region

ABSTRACTGaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

scholarly journals Low dislocation density, high power InGaN laser diodes

2004 ◽  
Vol 9 ◽  
Author(s):  
Piotr Perlin ◽  
M. Leszczyñski ◽  
P. Prystawko ◽  
P. Wisniewski ◽  
R. Czernetzki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
High Power ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Homogeneous Distribution ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
New Generation ◽  
Better Than

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 105 cm−2, i.e. two orders of magnitude better than typical for the Epitaxial Lateral Overgrowth laser structures fabricated on sapphire. The low density and homogeneous distribution of defects in our structures enables the realization of broad stripe laser diodes. We demonstrate that our laser diodes, having 15 μm wide stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long pulses. This result, which is among the best ever reported for nitride lasers, opens the path for the development of a new generation of high power laser diodes.

Detailed Characterisations of GaAs Films on Si Obtained by Conformal Growth.

1992 ◽  
Vol 280 ◽  
Author(s):  
B. Gerard ◽  
D. Pribat ◽  
R. Bisaro ◽  
E. Costard ◽  
J. Nagle ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Dislocation Density ◽  
The Self ◽  
Epitaxial Lateral Overgrowth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lateral Overgrowth ◽  
State Of Stress ◽  
Low Dislocation Density ◽  
Gaas Films

ABSTRACTConformal growth is a confined epitaxial lateral overgrowth technique capable of yielding low dislocation density GaAs films on Si. This technique makes extensive use of selective epitaxy and crystal growth is confined by a dielectric cap as well as by the self-passivated Si surface itself.In this paper, we have performed a detailed characterisation of the state of stress of the GaAs films in various configurations (after conformal growth and removal of the seed regions, and after the regrowth of an MBE layer) by photoluminescence measurements at 5K and X-ray diffraction experiments. Although the as-grown conformal films are found in the same state of stress than reference MOCVD GaAs epilayers on Si, we report a significant decrease of this stress after MBE regrowth on conformal films.

scholarly journals Fabrication of Low Dislocation Density, Single-Crystalline Diamond via Two-Step Epitaxial Lateral Overgrowth

Crystals ◽  
2017 ◽  
Vol 7 (4) ◽  
pp. 114 ◽  
Author(s):  
Fengnan Li ◽  
Jingwen Zhang ◽  
Xiaoliang Wang ◽  
Minghui Zhang ◽  
and Hongxing Wang
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Single Crystalline ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

400-nm Band AlGaInN-Based High Power Laser Diodes

2001 ◽  
Vol 693 ◽  
Author(s):  
Takeharu Asano ◽  
Motonobu Takeya ◽  
Tsuyoshi Tojyo ◽  
Shinro Ikeda ◽  
Takashi Mizuno ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Active Layer ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Direct Result ◽  
Electron Blocking Layer ◽  
Low Dislocation Density ◽  
Operating Current

AbstractHigh-power AlGaInN-based laser diodes (LDs) operating with high reliability in the 400-nm band have been successfully fabricated using a high-productivity process. Epitaxial lateral overgrowth (ELO) over a 10-m m region was employed to obtain a broad growth area with low dislocation density, and the thickness of the ELO-GaN layer was limited to approximately 5 m in order to minimize wafer bending. These techniques allow for the easy and reproducible alignment of the laser stripe on the region of low dislocation density. The insertion of a GaInN interlayer between the active layer and the AlGaN electron blocking layer was effective for reducing the strain between these two layers, resulting in homogeneous luminescence from the active layer and lower operating current. A mean time to failure of 15000 h under 30-mW continuous-wave operation at 60°C was realized as a direct result of the lower operating current. Productivity was remarkably improved by performing epitaxial growth on a 3-inch substrate. Highly uniform laser wafers were successfully fabricated by achieving minimal temperature variation (1000 ±7°C) over the 3-inch substrate. The resultant laser structures varied in thickness by only ±5%, and the photoluminescence wavelength was consistent within ±2.5 nm over the entire 3-inch substrate. The average threshold current of 550 LDs selected from a fourth wafer was 32.7 mA, with small standard deviation of 3.2 mA.

Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

2001 ◽  
Vol 40 (Part 2, No. 1A/B) ◽  
pp. L16-L19 ◽  
Author(s):  
Theeradetch Detchprohm ◽  
Masahiro Yano ◽  
Shigekazu Sano ◽  
Ryo Nakamura ◽  
Shingo Mochiduki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
New Approach ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

The Study of Seam Line Defects in Silicon-On-Oxide by Merged Epitaxial Lateral Overgrowth

1993 ◽  
Vol 317 ◽  
Author(s):  
Yangchin Shih ◽  
J. C. Lou ◽  
W. G. Oldham
Keyword(s):  
Epitaxial Film ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Formation Mechanisms ◽  
Crystal Silicon ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Low Dislocation Density ◽  
Line Defects

ABSTRACTSelective Epitaxial Growth of silicon through windows in SiO2 using low-temperature SiH2Cl2/H2 chemistry in a hot wall LPCVD system was used to form Epitaxial Lateral Overgrowth (ELO) regions of Silicon-on-insulator. In cases where pattern ‘width was less than two times epi film thickness, the ELO regions merged to form a continuous epitaxial film. In this study, 2.5 μm thick single crystal silicon layers were grown perfectly over oxide regions with very low dislocation density (< 104/cm2). The epitaxial Si/oxide interfaces were smooth and defect-free. However, a “seam”-like defect was occasionally observed in the epitaxial film on top of the oxide, at the locations where two growth fronts merged together. This crystallographic defect in some case extends through the whole Silicon-on-Oxide film and would be expected to be detrimental to electronic devices built on or close to it. The sturctures of these seam line defects were investigated in detail by transmission electron Microscopy (TEM). The formation mechanisms of these seam line defects and possible origins are discussed.

Characteristics of Fielo-GaN Grown by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Akira Usui ◽  
Haruo Sunakawa ◽  
Kenji Kobayashi ◽  
Heiji Watanabe ◽  
Masashi Mizuta
Keyword(s):  
Electron Microscopy ◽  
Dislocation Density ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Rocking Curve ◽  
X Ray ◽  
Lateral Overgrowth ◽  
Dislocation Behavior ◽  
Reflection Electron Microscopy

ABSTRACTThe crystal quality of facet-initiated epitaxial lateral overgrowth (FIELO) -GaN, in particular, that in the vicinity of the GaN surface, is reported. It is shown that the surface smoothness of FIELO-GaN enables us to use it as an “epi-ready” substrate. The crystallinity of FIELO-GaN is evaluated by x-ray rocking curve (XRC) measurements. We indicate that the FWHM of XRC should be reduced with the decrease of the dislocation density. We previously reported that the dislocation behavior of FIELO-GaN causes the tilting of the c-axis in the overgrown regions. By using scanning reflection electron microscopy (SREM), however, we show that the tilting on the surface of thick FIELO-GaN was negligibly small.

Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Kimura ◽  
C. Sasaoka ◽  
A. Sakai ◽  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Growth ◽  
Cross Sectional ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Sectional Shape

AbstractWe investigated the growth conditions for enhancing epitaxial lateral overgrowth (ELO) of GaN stripes selectively grown by low-pressure metalorganic vapor phase epitaxy. The ELO was enhanced for GaN <1100> stripes and with a small trimethylgallium flow-rate. This tendency did not depend on mask materials. The cross-sectional shape of the GaN <1100> stripes was trapezoidal for SiO2 masks, and rectangular for silicon nitride (SiN2) masks in a certain growth condition. A low dislocation density in the ELO region was obtained not only for the SiO2 masks but also for the SiN2 masks.

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